Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Xianfeng Ni"'
Publikováno v:
Crystals, Vol 13, Iss 12, p 1611 (2023)
InGaN-based red micro-light-emitting diodes (µLEDs) of different sizes were prepared in this work. The red GaN epilayers were grown on 4-inch sapphire substrates through metal-organic chemical vapor deposition (MOCVD). Etching, sidewall treatment, a
Externí odkaz:
https://doaj.org/article/6aa177c39ce64077ba3323725256d987
Publikováno v:
IET Generation, Transmission & Distribution, Vol 15, Iss 9, Pp 1387-1402 (2021)
Abstract This study reviews the failure of high‐voltage submarine cables used in offshore power transmission and provides highlights of their failure characteristic, mechanisms, key issues and prospects. High‐voltage submarine cables are designed
Externí odkaz:
https://doaj.org/article/17774eb305d042c0a463e36b892cfd60
Publikováno v:
Crystals, Vol 12, Iss 10, p 1461 (2022)
GaN-based high electron mobility transistors (HEMTs) are shown to have excellent properties, showing themselves to perform well among the throng of solid-state power amplifiers. They are particularly promising candidates for next-generation mobile co
Externí odkaz:
https://doaj.org/article/c81f6c83104a4dcea874ad796977aecb
Publikováno v:
Applied Sciences, Vol 11, Iss 15, p 6984 (2021)
The power system on the offshore platform is of great importance since it is the power source for oil and gas exploitation, procession and transportation. Transformers constitute key equipment in the power system, and partial discharge (PD) is its mo
Externí odkaz:
https://doaj.org/article/1544a1c0b32e4044bd62fc58ba00afac
Publikováno v:
Journal of Electronic Materials. 50:4239-4249
Gallium nitride (GaN)-on-diamond technology offers key parameters of high thermal conductivity, high power density, high electrical resistivity and small form factor at both the device and system levels, making GaN-on-diamond power amplifier devices
Publikováno v:
IET Generation, Transmission & Distribution, Vol 15, Iss 9, Pp 1387-1402 (2021)
This study reviews the failure of high‐voltage submarine cables used in offshore power transmission and provides highlights of their failure characteristic, mechanisms, key issues and prospects. High‐voltage submarine cables are designed and appl
Autor:
C. N. Huang, Xing Gu, Qian Fan, Bin Hua, Xianfeng Ni, Hsin-Chuan Wang, Zhengzhi Cai, Peihao Sun
Publikováno v:
IEEE Transactions on Electron Devices. 67:3988-3991
AlN devices have the potential to outperform current GaN devices, especially in the high-voltage region, thanks to AlN’s larger critical electric field and thermal conductivity. In order for the AlN-based power diodes to be realized and performance
Autor:
Yan Gu, Xianfeng Ni, Yueke Wang, Bin Hua, Feng Xie, Naiyan Lu, Xing Gu, Aaron J. Danner, Guofeng Yang, Qian Fan, Dawei Yan, Xiumei Zhang, Guoqing Chen
Publikováno v:
IEEE Transactions on Electron Devices. 67:160-165
An AlGaN-based solar blind ultraviolet (UV) metal–semiconductor–metal (MSM) photodetector (PD) with a high Al-content of 0.6 has been successfully fabricated. The device exhibits a cutoff wavelength of 255 nm corresponding to the sharp cutoff tra
Publikováno v:
Applied Sciences, Vol 11, Iss 6984, p 6984 (2021)
Applied Sciences
Volume 11
Issue 15
Applied Sciences
Volume 11
Issue 15
The power system on the offshore platform is of great importance since it is the power source for oil and gas exploitation, procession and transportation. Transformers constitute key equipment in the power system, and partial discharge (PD) is its mo
Autor:
Xing Gu, Xianfeng Ni, Yueke Wang, Xiumei Zhang, Yan Gu, Guofeng Yang, Rui Sun, Feng Xie, Yu Ding, Qian Fan, Bin Hua
Publikováno v:
Nanomaterials
Volume 9
Issue 12
Volume 9
Issue 12
A comprehensive insight into the electronic and optical properties of small-lattice-mismatched InSe-GeTe heterobilayer (HBL) is performed based on the density functional theory (DFT) with van der Waals corrections from first-principles perspective. T