Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Xian-Yi Lv"'
Publikováno v:
Chinese Physics B.
In this paper, the trench diamond junction barrier Schottky (JBS) diode with a sidewall enhanced structure is designed by Silvaco simulation. Compared with the conventional trench JBS diode, Schottky contact areas are introduced on the sidewall of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f5499cc0fbcf2cfe30e1cf517811d9
https://doi.org/10.1088/1674-1056/acc2ae
https://doi.org/10.1088/1674-1056/acc2ae
Publikováno v:
Chinese Physics B. 31:108106
The relationship between the spatial position of the diamond seed and growth mode is investigated with an enclosed-type holder for single-crystal diamond growth using the microwave plasma chemical vapor deposition epitaxial method. The results demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1209293ceded5237d34e88bb343609
https://doi.org/10.1088/1674-1056/ac7e35
https://doi.org/10.1088/1674-1056/ac7e35
Autor:
Wang Lin, Ting-Ting Wang, Qi-Liang Wang, Xian-Yi Lv, Gen-Zhuang Li, Liu-An Li, Jin-Ping Ao, Guang-Tian Zou
Publikováno v:
Chinese Physics B. 31:108105
A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes (SBDs) by using an n-Ga2O3/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c111f940c1adc1abbdd6c4bbbe5a62
https://doi.org/10.1088/1674-1056/ac7e37
https://doi.org/10.1088/1674-1056/ac7e37