Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Xian-Gang Xu"'
Autor:
Xiaobo Hu, Jin Ying Yu, Xin Tong Liu, Xiu Fang Chen, Xue Jian Xie, Xiang Long Yang, Xian Gang Xu, Duo Liu
Publikováno v:
Materials Science Forum. 1004:20-25
The carbon inclusions in SiC bulk crystals were studied by using optical microscope. The carbon inclusions were classified into three types, namely Type Ⅰ (100~1000 μm), Type Ⅱ (20~50 μm), Type Ⅲ (~5 μm) carbon inclusions based on their diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb4774df6c24b2793915e8a828eab8b
https://doi.org/10.4028/www.scientific.net/msf.1004.20
https://doi.org/10.4028/www.scientific.net/msf.1004.20
Autor:
Mi Seon Park, Xiu Fang Chen, Hao Qu, Xian Gang Xu, Chae Young Lee, Wei Fan, Dae Sung Kim, Won-Jae Lee, Yeon Suk Jang, Jeong Min Choi
Publikováno v:
Materials Science Forum. 963:46-50
The present research was focused on the effect of porous graphite plate in TaC-coated crucible on crystal quality and resistivity of semi-insulating SiC crystals. Two SiC crystals grown with/without porous graphite plate in TaC-coated crucible were s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37aac68e6a7ba3fa456241ab2f91379f
https://doi.org/10.4028/www.scientific.net/msf.963.46
https://doi.org/10.4028/www.scientific.net/msf.963.46
Autor:
In Seok Yang, Jeong Min Choi, Yeon Suk Jang, Won-Jae Lee, Tae Hee Kim, Dae Sung Kim, Xian Gang Xu, Mi Seon Park, Xiu Fang Chen, Chae Young Lee
Publikováno v:
Materials Science Forum. 963:30-33
Two SiC crystals were grown using SiC source powder with different level of purity and then the effect of the purity of SiC source materials on the final electrical properties has been systematically observed. Furthermore, the variation of vanadium a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7663de92dab6283ca193691590fd4ed
https://doi.org/10.4028/www.scientific.net/msf.963.30
https://doi.org/10.4028/www.scientific.net/msf.963.30
Publikováno v:
Materials Science Forum. 963:161-165
Single layer graphene is fabricated on the Si face of silicon carbide through thermal decomposition. The thickness of graphene was checked by a combination of ex situ Kelvin probe force microscopy together with Raman spectroscopy and atomic force mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e11793095a4f2f42aa5c993a5de211
https://doi.org/10.4028/www.scientific.net/msf.963.161
https://doi.org/10.4028/www.scientific.net/msf.963.161
Autor:
Xuejian Xie, Yan Peng, P. Yu, Xian Gang Xu, Xianglong Yang, Ruiqi Wang, Xiaobo Hu, Xiufang Chen
Publikováno v:
Materials Science Forum. 897:307-310
Different nitrogen-doped 4H-SiC single crystals were grown by the physical vapor transport method through mixing nitrogen gas to the argon growth atmosphere in the composition range from 0% to 10%. The electrical properties of the crystals, including
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::576b394649dec90a762723a39b33ebba
https://doi.org/10.4028/www.scientific.net/msf.897.307
https://doi.org/10.4028/www.scientific.net/msf.897.307
Publikováno v:
Materials Science Forum. 858:1133-1136
Wafer-scale graphene on SiC with uniform structural features was grown on semi-insulating 4 inch on-axis 4H-SiC (0001) face. Growth was carried out in a conventional physical vapor transport (PVT) growth system. Atmospheric pressure graphitization an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::606e1dc6cfcd6ae5e52dcae95eeb4158
https://doi.org/10.4028/www.scientific.net/msf.858.1133
https://doi.org/10.4028/www.scientific.net/msf.858.1133
Publikováno v:
Optical Engineering. 59:1
For applications in portable electronic devices and machine vision, a small sized focus-tunable lens or lens system is highly desired. Materials with electrically tunable optical refractive indices are required in these fields. A functional material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d43bfc389cf1fe7c6455fbaa6bc2966d
https://doi.org/10.1117/1.oe.59.1.017107
https://doi.org/10.1117/1.oe.59.1.017107
Publikováno v:
Guang pu xue yu guang pu fen xi = Guang pu. 36(4)
Laser micromachining has proven to be a useful tool for precision processing of semiconductors. For Silicon Carbide (SiC) single crystals, ablation with ultraviolet wavelength laser could lead to the maximum absorption efficiency of incident energy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a986b1a3100962bced8e09072265d884
https://pubmed.ncbi.nlm.nih.gov/30052358
https://pubmed.ncbi.nlm.nih.gov/30052358
Publikováno v:
Materials Science Forum. :265-268
Room temperature infrared transmittance and reflectance spectra of 4H and 6H-SiC single crystals were measured by a NEXUS 670 Fourier Transform Infrared-Raman spectrometer. The transmittance and reflectance of non-doped, V-doped semi-insulating (SI),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcce76318194ea5eec2288c7a9a81178
https://doi.org/10.4028/www.scientific.net/msf.821-823.265
https://doi.org/10.4028/www.scientific.net/msf.821-823.265
Publikováno v:
Materials Science Forum. :68-72
Bulk 4H-SiC crystals were grown on 4° off-axis seeds by the physical vapor transport technique. Two completely different surface morphologies of as-grown crystals were observed by laser scanning confocal microscopy. The formation mechanisms of the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8eda45078638c852e6cdb557e84ccc5
https://doi.org/10.4028/www.scientific.net/msf.821-823.68
https://doi.org/10.4028/www.scientific.net/msf.821-823.68