Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Xian Qi Dai"'
Publikováno v:
Acta Physica Sinica. 69:157302
The contacts between semiconductor and metal are vital in the fabrication of nano electronic and optoelectronic devices. The contact type has a great influence on the function realization and performance of the device. In order to prepare multifuncti
Autor:
Ya Qiang Ma, Wei Li, Ru Meng Zhao, Xian Qi Dai, Meng Meng Niu, Yi Li, Ming Yu Zhao, Ya Nan Tang
Publikováno v:
Applied Physics A. 123
CO catalytic oxidation on the two-dimensional (2D) Fe/N X clusters embedded graphene (G) (X = 4, 3, 2, 1) with D 4h, C 2v, C 2h, and C S symmetries is investigated using the first-principle method. Fe/N2-G system with C 2h symmetry facilitates the O2
The Direct Oxidation of CO on the Highly Active Pt-Skin Pt3Ni(111) Surface: a First Principles Study
Publikováno v:
Advanced Materials Research. 213:147-151
The catalytic properties of the Pt3Ni(111) surface with Pt-skin [denoted as Pt-skin Pt3Ni(111)] are investigated through the adsorption and oxidation properties of CO on the Pt-skin Pt3Ni(111). It is found that, on the Pt-skin Pt3Ni(111), the adsorpt
Publikováno v:
Surface Science. 601:2161-2165
First-principles calculations are performed to study the various structures of oxygen (O) adsorbed on InN(0 0 0 1) surfaces. It is found that the formation energy of O on InN(0 0 0 1) decreases with decreasing oxygen coverage. Of all the adsorbate in
Publikováno v:
Surface Review and Letters. 12:483-487
Using ab initio total energy calculations, we have studied the formation of indium ( In ) wires on flat and stepped Si (100)-(2×1) surfaces at low coverage. On flat Si (100), two possible orientations of In wires are examined: (i) the wire is perpen
Publikováno v:
Modern Physics Letters B. 19:589-598
Within the framework of effective-mass approximation, the exciton states localized in cylindrical InGaN quantum dots (QDs) are investigated using a variational approach. The relationship between the exciton states and structural parameters of QDs wit
Publikováno v:
Surface Review and Letters. 12(04):483-487
Using ab initio total energy calculations, we have studied the formation of indium (In) wires on flat and stepped Si(100)-(2×1) surfaces at low coverage. On flat Si(100), two possible orientations of In wires are examined: (i) the wire is perpendicu
Publikováno v:
Surface Science. 572:77-83
The atomic structures of indium (In) on silicon (Si) (1 0 0)-(2 × 1) surface are investigated by the local density approximation using first-principles pseudopotentials. Total energy optimizations show that the energetically favored structure is the
Publikováno v:
Surface Science. 504:37-41
The adsorption of one monolayer Co atoms on an ideal Si(1 0 0) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of adsorption systems of a Co atom on different sites are calculated. It is found
Publikováno v:
Communications in Theoretical Physics. 26:257-262
The linear-muffin-tin orbital method is used to study the electronic-energy-band structure of zinc-blende CdS. Incorporating the 4d states of Cd into the valence band gives substantially the main-valence-band width, and yields valence-band features i