Zobrazeno 1 - 10
of 255
pro vyhledávání: '"Xia Jian-Bai"'
Autor:
Li Shu-Shen, Xia Jian-Bai
Publikováno v:
Nanoscale Research Letters, Vol 2, Iss 11, Pp 554-560 (2007)
AbstractThe electronic structure and binding energy of a hydrogenic acceptor impurity in 2, 1, and 0-dimensional semiconductor nano-structures (i.e. quantum well (QW), quantum well wire (QWW), and quantum dot (QD)) are studied in the framework of eff
Externí odkaz:
https://doaj.org/article/fb3e23ceb5a748c8b30cc4dd5aa60006
Autor:
Li Shu-Shen, Xia Jian-Bai
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 2, Pp 167-171 (2006)
AbstractIn the framework of effective mass envelope function theory, the electronic structures of GaAs/AlxGa1-xAs quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and
Externí odkaz:
https://doaj.org/article/23f1def3c3054547af59d9e2c4c7dc85
Autor:
Li Shu-Shen, Xia Jian-Bai
Publikováno v:
Nanoscale Research Letters, Vol 4, Iss 2, Pp 178-180 (2008)
Abstract The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAl
Externí odkaz:
https://doaj.org/article/ad2cfd4493eb447781af201003ab229d
Akademický článek
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Publikováno v:
In Journal of Magnetism and Magnetic Materials 15 November 2019 490
We present a new empirical pseudopotential (EPM) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using the periodic boundary conditions. To treat the non-equilibrium condition, instead of di
Externí odkaz:
http://arxiv.org/abs/1011.0537
Publikováno v:
J. Appl. Phys. 106, 023910 (2009)
The electronic structure and magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO have been investigated using first-principles methods. We show that the magnetic coupling between Gd or Nd ions in the nearest neighbor sites is ferroma
Externí odkaz:
http://arxiv.org/abs/1005.1115
Autor:
Liu, Duan-Yang, Xia, Jian-Bai
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures April 2018 98:6-9
We have investigated the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots by calculating 17 systems with different quantum dot shape, size, and alloying profile using atomistic empirical pseudopotential method within the ``stra
Externí odkaz:
http://arxiv.org/abs/cond-mat/0409442