Zobrazeno 1 - 10
of 129
pro vyhledávání: '"Xia, Zhanbo"'
Autor:
Xia, Zhanbo, Joishi, Chandan, Sohel, Shahadat H., Xie, Andy, Beam, Edward, Cao, Yu, Rajan, Siddharth
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN base region
Externí odkaz:
http://arxiv.org/abs/2408.14363
We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The selective injection design regulates minority carrier transport under
Externí odkaz:
http://arxiv.org/abs/2309.09886
Autor:
Rahman, Sheikh Ifatur, Jamal-Eddine, Zane, Xia, Zhanbo, Awwad, Mohammad, Armitage, Rob, Rajan, Siddharth
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport mechanisms
Externí odkaz:
http://arxiv.org/abs/2211.05704
Autor:
Xia, Zhanbo
β-Ga2O3 has recently attracted attention as an ultra-wide bandgap (4.7 eV) semiconductor that can be controllably doped, and grown directly from the melt in single crystal form. The ease of n-type doping with tetravalent cations, a wide variety of b
Autor:
Kalarickal, Nidhin Kurian, Fiedler, Andreas, Dhara, Sushovan, Rahman, Mohammad Wahidur, Kim, Taeyoung, Xia, Zhanbo, Eddine, Zane Jamal, Dheenan, Ashok, Brenner, Mark, Rajan, Siddharth
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $\beta$-Ga2O3. Etching of $\beta$-Ga2O3 due to excess Ga adatoms on the epilayer surface had be
Externí odkaz:
http://arxiv.org/abs/2105.09503
Autor:
Adnan, Md M., Verma, Darpan, Xia, Zhanbo, Kalarickal, Nidhin K., Rajan, Siddharth, Myers, Roberto C.
Publikováno v:
Phys. Rev. Applied 16, 034011 (2021)
$\beta-Ga_{2}O_{3}$ is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wide bandgap. This provides a rare opportunity in the solid-state to
Externí odkaz:
http://arxiv.org/abs/2011.00375
Autor:
Kalarickal, Nidhin Kurian, Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, McGlone, Joe F., Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping, Rajan, Siddharth
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics
Externí odkaz:
http://arxiv.org/abs/2006.02349
Autor:
Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, Moore, Wyatt, Chen, Zhaoying, McGlone, Joe F., Daughton, David R., Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, Zhao, Hongping
A new record-high room temperature electron Hall mobility (${\mu}_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for ${\beta}$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating s
Externí odkaz:
http://arxiv.org/abs/2004.13089
Autor:
Joishi, Chandan, Xia, Zhanbo, Jamison, John S., Sohel, Shahadat H., Myers, Roberto C., Lodha, Saurabh, Rajan, Siddharth
We introduce a deep-recessed gate architecture in $\beta$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped $\beta$-Ga$_2$O$_3$ layer
Externí odkaz:
http://arxiv.org/abs/2004.10440
Autor:
Xia, Zhanbo, Chandrasekar, Hareesh, Moore, Wyatt, Wang, Caiyu, Lee, Aidan, McGlone, Joe, Kalarickal, Nidhin Kurian, Arehart, Aaron, Ringel, Steven, Yang, Fengyuan, Rajan, Siddharth
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materi
Externí odkaz:
http://arxiv.org/abs/1911.02068