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Gate-Compatible Circuit Quantum Electrodynamics in a Three-Dimensional Cavity Architecture

Autor: Xia, Zezhou, Huo, Jierong, Li, Zonglin, Ying, Jianghua, Liu, Yulong, Tang, Xin-Yi, Wang, Yuqing, Chen, Mo, Pan, Dong, Zhang, Shan, Liu, Qichun, Li, Tiefu, Li, Lin, He, Ke, Zhao, Jianhua, Shang, Runan, Zhang, Hao

Publikováno v: Phys. Rev. Applied 21, 034031 (2024)

Semiconductor-based superconducting qubits offer a versatile platform for studying hybrid quantum devices in circuit quantum electrodynamics (cQED) architecture. Most of these cQED experiments utilize coplanar waveguides, where the incorporation of D

Externí odkaz: http://arxiv.org/abs/2311.07337

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Ballistic PbTe Nanowire Devices

Publikováno v: Nano Letters (2023)

Disorder is the primary obstacle in current Majorana nanowire experiments. Reducing disorder or achieving ballistic transport is thus of paramount importance. In clean and ballistic nanowire devices, quantized conductance is expected with plateau qua

Externí odkaz: http://arxiv.org/abs/2309.05966

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Hard superconducting gap in PbTe nanowires

Autor: Gao, Yichun, Song, Wenyu, Yang, Shuai, Yu, Zehao, Li, Ruidong, Miao, Wentao, Wang, Yuhao, Chen, Fangting, Geng, Zuhan, Yang, Lining, Xia, Zezhou, Feng, Xiao, Zang, Yunyi, Li, Lin, Shang, Runan, Xue, Qi-Kun, He, Ke, Zhang, Hao

Publikováno v: Chin. Phys. Lett. 41, 038502 (2024)

Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits. The performance of these quantum devices heavily relies on the quality of the induce

Externí odkaz: http://arxiv.org/abs/2309.01355

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Gatemon qubit based on a thin InAs-Al hybrid nanowire

Autor: Huo, Jierong, Xia, Zezhou, Li, Zonglin, Zhang, Shan, Wang, Yuqing, Pan, Dong, Liu, Qichun, Liu, Yulong, Wang, Zhichuan, Gao, Yichun, Zhao, Jianhua, Li, Tiefu, Ying, Jianghua, Shang, Runan, Zhang, Hao

Publikováno v: Chin. Phys. Lett. 40, 047302 (2023)

We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, w

Externí odkaz: http://arxiv.org/abs/2302.04053

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Large Andreev bound state zero bias peaks in a weakly dissipative environment

Autor: Wang, Zhichuan, Zhang, Shan, Pan, Dong, Zhang, Gu, Xia, Zezhou, Li, Zonglin, Liu, Donghao, Cao, Zhan, Liu, Lei, Wen, Lianjun, Liao, Dunyuan, Zhuo, Ran, Li, Yongqing, Liu, Dong E., Shang, Runan, Zhao, Jianhua, Zhang, Hao

Publikováno v: Phys. Rev. B 106, 205421 (2022)

We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance. Probing these large ZBPs

Externí odkaz: http://arxiv.org/abs/2202.09299

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