Zobrazeno 1 - 10
of 156
pro vyhledávání: '"Xia, Guangrui"'
Autor:
Wang, Yu-Xuan, Tai, Mao-Chou, Chang, Ting-Chang, Huang, Wei-Chen, Wan, Zeyu, Li, Simon, Sze, Simon, Xia, Guangrui
We examined the effect of backside insulation on the dynamic on-resistance of lateral p-GaN HEMTs. To gain a comprehensive understanding of the dynamic onresistance difference between substrate grounded and substrate floating p-GaN HEMTs, we conducte
Externí odkaz:
http://arxiv.org/abs/2406.08701
Our study focused on the Ge thickness and TDD impacts on Ge's photoluminescence (PL). The PL peak intensity of a bulk Ge sample (TDD = 6000 cm-2, n-doping = 1e16 cm-3) experiences a remarkable 32-fold increase as the thickness is reduced from 535 to
Externí odkaz:
http://arxiv.org/abs/2404.05663
Autor:
Wang, Liming, Xia, Guangrui
Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated photonic circuits. In this work, Ge thin films prepared by wet etchin
Externí odkaz:
http://arxiv.org/abs/2210.08673
This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority c
Externí odkaz:
http://arxiv.org/abs/2207.08760
Publikováno v:
In Electrochimica Acta 20 July 2024 493
Publikováno v:
In Applied Surface Science 30 June 2024 659
Autor:
Zhou, Guangnan, Zeng, Fanming, Gao, Rongyu, Wang, Qing, Cheng, Kai, Xia, Guangrui, Yu, Hongyu
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN l
Externí odkaz:
http://arxiv.org/abs/2106.01495
Autor:
Zhou, Guangnan, Jiang, Yang, Yang, Gaiying, Wang, Qing, Fan, Mengya, Jiang, Lingli, Yu, Hongyu, Xia, Guangrui
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing condition window (600 - 700 oC, 1 - 4 min). Results from similar comm
Externí odkaz:
http://arxiv.org/abs/2102.03418
Publikováno v:
In Electrochimica Acta 1 December 2023 470
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.