Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Xi-Yuan Dai"'
1
High brightness silicon nanocrystal white light-emitting diode with luminance of 2060 cd/m
Autor: Yu-Chen, Zhang, Zhi-Yuan, Yu, Xia-Yan, Xue, Fei-Long, Wang, Shuai, Li, Xi-Yuan, Dai, Li, Wu, Shu-Yu, Zhang, Song-You, Wang, Ming, Lu
Publikováno v: Optics express. 29(21)
High brightness Si nanocrystal white light-emitting diodes (WLED) based on differentially passivated silicon nanocrystals (SiNCs) are reported. The active layer was made by mixing freestanding SiNCs with hydrogen silsesquioxane, followed by annealing
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::005914733e94361718f0ddd096a9ae83
https://pubmed.ncbi.nlm.nih.gov/34809210
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3
High brightness silicon nanocrystal white light-emitting diode with luminance of 2060 cd/m2
Autor: Feilong Wang, Xia-Yan Xue, Shuai Li, Shuyu Zhang, Yuchen Zhang, Zhiyuan Yu, Xi-Yuan Dai, Ming Lu, Songyou Wang, Li Wu
Publikováno v: Optics Express. 29:34126
High brightness Si nanocrystal white light-emitting diodes (WLED) based on differentially passivated silicon nanocrystals (SiNCs) are reported. The active layer was made by mixing freestanding SiNCs with hydrogen silsesquioxane, followed by annealing
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebf4207e22f634e7bef27345e58cd92b
https://doi.org/10.1364/oe.437737
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4
High-pressure Ar passivation to enhance the photoluminescence of Si nanocrystals
Autor: Xi-Yuan Dai, Jadam Liu, Chi Zhang, Shuai Li, Yuchen Zhang, Ming Lu, Zhiyuan Yu, Fei Hu, Jian Sun
Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 131:114680
Photoluminescence (PL) enhancement of Si nanocrystals (Si–NCs) embedded in SiO 2 matrix by high-pressure (30 bar) Ar passivation at moderately high temperatures has been observed. For the same pressure, time and temperature of passivation, the PL e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3dc03e63d912e2a59c699fb49e3501af
https://doi.org/10.1016/j.physe.2021.114680
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5
Achieving high-responsivity near-infrared detection at room temperature by nano-Schottky junction arrays via a black silicon/platinum contact approach
Autor: Jian Sun, Xi-Yuan Dai, Li Wu, Ming Lu, Shuai Li, Fei Hu
Publikováno v: Photonics Research. 9:1324
A room temperature sub-bandgap near-infrared ( λ > 1100 nm ) Si photodetector with high responsivity is achieved. The Si photodetector features black Si made by wet etching Si (100), Si/PtSi nano-Schottky junction arrays made from black Si/Pt contac
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a0fb1adbc3f768446297ce68142927fb
https://doi.org/10.1364/prj.417866
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6
Improving the performance of crystalline Si solar cell by high-pressure hydrogenation*
Autor: Liang-Xin Wang, Shu-Jie Li, Ming Lu, Xin-Ju Yang, Zhi-Yuan Yu, Fei Hu, Shuai Li, Yu-Chen Zhang, Xi-Yuan Dai
Publikováno v: Chinese Physics B. 29:118801
We report an approach of high-pressure hydrogenation to improve the performance of crystalline Si (c-Si) solar cells. As-received p-type c-Si wafer-based PN junctions were subjected to high-pressure (2.5 MPa) hydrogen atmosphere at 200 °C, followed
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa983d9cd8ad57bece38d6feb963d828
https://doi.org/10.1088/1674-1056/abb3e3
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7
Enhancing light emission of Si nanocrystals by means of high-pressure hydrogenation
Autor: Shuai Li, Xi-Yuan Dai, Xiaofeng Ma, Ming Lu, Ruihua Gao, Yuchen Zhang, Wen-Jie Zhou, Chi Zhang
Publikováno v: Optics Express. 28:23320
High-density Si nanocrystal thin film composed of Si nanocrystals and SiO2, or Si-NCs:SiO2, was prepared by annealing hydrogen silsesquioxane (HSQ) in a hydrogen and nitrogen (H2:N2=5%:95%) atmosphere at 1100°C. Conventional normal-pressure (1-bar)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea68bef0bbe99b17d6e09da9c830842f
https://doi.org/10.1364/oe.396654
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8
All-inorganic silicon white light-emitting device with an external quantum efficiency of 1.0%
Autor: Ming Lu, Jiarong Chen, Bilin Yang, Chi Zhang, Dong-Chen Wang, Shuyu Zhang, Xi-Yuan Dai, Shuai Li, Yuchen Zhang
Publikováno v: Optics Express. 28:194
With low toxicity and high abundance of silicon, silicon nanocrystal (Si-NC) based white light-emitting device (WLED) is expected to be an alternative promising choice for general lighting in a cost-effective and environmentally friendly manner. Ther
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::359f04b3a9281bb432688a722e1ef037
https://doi.org/10.1364/oe.382691
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9
Black silicon Schottky photodetector in sub-bandgap near-infrared regime
Autor: Xi-Yuan Dai, Ming Lu, Zhi-Quan Zhou, Rong-Jun Zhang, Xiangyang Kong, Jian Sun, Songyou Wang, Fei Hu, Shulin Sun
Publikováno v: Optics Express. 27:3161
Sub-bandgap near-infrared silicon (Si) photodetectors are key elements in integrated Si photonics. We demonstrate such a Si photodetector based on a black Si (b-Si)/Ag nanoparticles (Ag-NPs) Schottky junction. This photodetector synergistically emplo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c50ae49922a35772e8294e5d280a7fa4
https://doi.org/10.1364/oe.27.003161
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