Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Xi Bao Chen"'
Autor:
J.G. Lv, Z.Q. Sun, S.S. Jiang, P. Jin, Gang He, J. Gao, Mulong Liu, C.Y. Zheng, W.D. Li, J.W. Zhang, D.Q. Xiao, Xi-Bao Chen
Publikováno v:
Journal of Alloys and Compounds. 679:115-121
High- k HfO x N y and HfO 2 have been applied to amorphous InGaZnO ( a -IGZO) metal–oxide–semiconductor (MOS) capacitors as high-k gate dielectrics by using radio-frequency sputtering at room temperature. Effects of nitrogen incorporation on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d464d5574562a83388fa126e85fb4c0
https://doi.org/10.1016/j.jallcom.2016.04.025
https://doi.org/10.1016/j.jallcom.2016.04.025
Autor:
J.W. Zhang, Gang He, Xi-Bao Chen, Rui Ma, D.Q. Xiao, Z.Q. Sun, Mulong Liu, M. Zhang, Y.M. Liu, P. Jin, J. Gao
Publikováno v:
Journal of Alloys and Compounds. 649:128-134
High-k gate dielectric HfTiOx thin films have been deposited on Si and quartz substrate by radio frequency (RF) magnetron sputtering. The structural and optical properties of HfTiOx thin films related to deposition power are investigated by X-ray dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88352e3926d7d1af25263d967edbb566
https://doi.org/10.1016/j.jallcom.2015.07.076
https://doi.org/10.1016/j.jallcom.2015.07.076
Publikováno v:
Journal of Alloys and Compounds. 649:1273-1279
The effect of boron (B) doping on the microstructure, band gap energy and electrical properties of ZrO 2 gate dielectrics deposited by sol–gel method at low temperature were systemically investigated. By means of characterization of spectroscopy el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd697592a6db37c9442030c34b12bc8
https://doi.org/10.1016/j.jallcom.2015.07.210
https://doi.org/10.1016/j.jallcom.2015.07.210
Autor:
D.Q. Xiao, Minghua Liu, Rui Ma, Xi-Bao Chen, J.W. Zhang, Z.Q. Sun, Gang He, J. Gao, P. Jin, Hanshuang Chen
Publikováno v:
Journal of Alloys and Compounds. 647:1054-1060
Current conduction mechanisms of Hf1−xTixO2-gated metal–oxide–semiconductor (MOS) capacitors depending on various post-annealing temperature (PDA) have been investigated. The sample subjected to 400 °C annealing exhibits superior performance w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec9e79d690b0061c00203b88a292767d
https://doi.org/10.1016/j.jallcom.2015.06.042
https://doi.org/10.1016/j.jallcom.2015.06.042
Publikováno v:
Journal of Alloys and Compounds. 647:1035-1039
The effect of nitrogen on the band offset of sputtering-derived InZnGaO 4 (IGZO)/Si heterostructures has been systematically investigated by x-ray photoelectron spectroscopy (XPS) measurements. Elemental analysis indicates that nitrogen has been succ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a8cd01e060a501ddbd5f37379771027
https://doi.org/10.1016/j.jallcom.2015.05.263
https://doi.org/10.1016/j.jallcom.2015.05.263
Publikováno v:
Journal of Alloys and Compounds. 642:172-176
In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (Δ E v ) of sputter deposited HfTiO/InZnGaO 4 (IGZO) heterostructures. A Δ E v value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662716a0a94cb122402e44436116d427
https://doi.org/10.1016/j.jallcom.2015.04.059
https://doi.org/10.1016/j.jallcom.2015.04.059
Publikováno v:
Journal of Alloys and Compounds. 632:533-539
The effects of substrate temperature (Ts) on the electrical and optical properties of amorphous InGaZnO thin films deposited by sputtering have been investigated. As Ts increased from RT to 400 °C, all the films remained amorphous, the transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7ad2b99174649ae8ed131a2f63f625
https://doi.org/10.1016/j.jallcom.2015.01.143
https://doi.org/10.1016/j.jallcom.2015.01.143
Autor:
B. Deng, L. Zhou, J.W. Zhang, Xurong Chen, J.G. Lv, Z.Q. Sun, Gaohang He, Xi-Bao Chen, Hanshuang Chen
Publikováno v:
Journal of Alloys and Compounds. 611:253-259
TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(1 0 0) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf1−xTixO2 films related to TiO2 concentration are systematically i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5574ede71c80ba35bc0d46748438cbb
https://doi.org/10.1016/j.jallcom.2014.05.074
https://doi.org/10.1016/j.jallcom.2014.05.074
Publikováno v:
Applied Mechanics and Materials. :1087-1090
Torque converter turboshaft is a hydraulic mechanical transmission devices of key components. In a new-mounted hydraulic mechanical transmission, super heavy laden vehicle during the test, the torque converter turboshaft fracture occurs when the vehi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3bd96b158f4d7f2adea394e46f06dd
https://doi.org/10.4028/www.scientific.net/amm.571-572.1087
https://doi.org/10.4028/www.scientific.net/amm.571-572.1087
Publikováno v:
Journal of Alloys and Compounds. 590:465-468
8-Hydroxyquinoline manganese (Mnq2) nanobelts with width of 500 nm and length of 2–4 μm have been synthesized by a facile sonochemical route. The composition, morphology and size of the as-prepared sample were confirmed by elemental analysis (EA),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8af992c37fbca16006c0c17dc8abd5
https://doi.org/10.1016/j.jallcom.2013.12.089
https://doi.org/10.1016/j.jallcom.2013.12.089