Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Xavier Mellhaoui"'
Autor:
Pierre Ranson, M Volatier, Pascal Brault, Xavier Mellhaoui, Remi Dussart, Philippe Lefaucheux, C Socquet-Clerc, Thomas Tillocher
Publikováno v:
Journal of Physics D: Applied Physics. 38:3395-3402
An inductively coupled SF6/O2 plasma is used to form a columnar microstructure (CMS) on silicon samples cooled at very low temperature (~ −100 °C). The formation of this CMS is studied as a function of bias voltage, temperature, RF power and gas p
Autor:
Pierre Ranson, Xavier Mellhaoui, Mohamed Boufnichel, R Benoit, Philippe Lefaucheux, A Basillais, H Estrade-Szwarckopf, Remi Dussart, G. Marcos, Thomas Tillocher
Publikováno v:
Journal of Micromechanics and Microengineering. 14:190-196
Passivation mechanisms of Si trenches involved in SF6/O2 cryogenic plasma etching were investigated in order to better control the process and avoid defects. Trench sidewalls and profiles were ex situ characterized geometrically by SEM and chemically
Autor:
Olivier Joubert, Damien Perret, Bénédicte Mortini, Arnaud Bazin, Erwine Pargon, Xavier Mellhaoui
Publikováno v:
SPIE, advanced lithography
SPIE, advanced lithography, 2008, san jose, United States
Proceedings SPIE
SPIE 2008
SPIE 2008, 2008, United States. pp.6923
SPIE, advanced lithography, 2008, san jose, United States
Proceedings SPIE
SPIE 2008
SPIE 2008, 2008, United States. pp.6923
Since they have been introduced to substitute poly(hydroxystyrene) based 248nm photoresists (PR), 193nm photoresists based on acrylate chemistry have raised issues regarding their dry etch resistance. These resists undergo severe degradations during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::424c317c48de0cb5f935e71823d2ee09
https://hal.archives-ouvertes.fr/hal-00384220
https://hal.archives-ouvertes.fr/hal-00384220
Autor:
N. Mekkakia Maaza, Xavier Mellhaoui, Philippe Lefaucheux, Thomas Tillocher, Pierre Ranson, Mohamed Boufnichel, Remi Dussart, Lawrence J. Overzet
Publikováno v:
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2006, 24 (4), pp.1073. ⟨10.1116/1.2210946⟩
Journal of Vacuum Science and Technology A, American Vacuum Society, 2006, 24 (4), pp.1073. ⟨10.1116/1.2210946⟩
International audience; In silicon etching in SF6/O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at lower oxygen proportions if
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9985bd257e2c059d607b0df353e40f84
https://hal.archives-ouvertes.fr/hal-00365909
https://hal.archives-ouvertes.fr/hal-00365909
Autor:
Thomas Tillocher, Philippe Lefaucheux, Xavier Mellhaoui, Lawrence J. Overzet, Remi Dussart, Pierre Ranson, Mohamed Boufnichel
Publikováno v:
Journal of The Electrochemical Society. 155:D187
Two types of silicon cryoetching processes are proposed. The first one consists of alternating SF 6 plasma isotropic etching steps and SiF 4 /O 2 passivation steps at low temperature of the silicon substrate. This process only works at very low tempe
Autor:
Philippe Lefaucheux, Thomas Tillocher, Lawrence J. Overzet, Pierre Ranson, Xavier Mellhaoui, Remi Dussart, Mohamed Boufnichel
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2005, 98, pp.104901-10
Journal of Applied Physics, American Institute of Physics, 2005, 98, pp.104901-10
The SiOxFy passivation layer created on structure sidewalls during silicon cryoetching is investigated. This SiOxFy passivation layer formation strongly depends on O2 content, temperature and bias. It is a fragile layer, which mostly disappears when