Ion-beam modifications of mechanical and dimensional properties of silicon carbide

Autor: Jean-Marc Costantini, Lionel Thomé, Maxime Sauzay, Xavier Kerbiriou

Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2012, 45, pp.465301. ⟨10.1088/0022-3727/45/46/465301⟩
Journal of Physics D: Applied Physics, 2012, 45, pp.465301. ⟨10.1088/0022-3727/45/46/465301⟩

3C-SiC single crystal epitaxial layers, 6H-SiC single crystal plates and α-SiC Hexoloy sinters were irradiated with 4.0 MeV Xe or 4.0 MeV Au ions at room temperature. Mechanical and dimensional evolutions of silicon carbide are studied by means of n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba942a36be99c093d7802ba76d06d08f
http://hal.in2p3.fr/in2p3-00752985

Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: Effects on swelling and mechanical properties

Autor: Jacek Jagielski, Jean-Marc Costantini, Xavier Kerbiriou, Lionel Thomé, Maxime Sauzay, Jean-Jacques Grob, S. Sorieul

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2009, 105, pp.073513. ⟨10.1063/1.3103771⟩
Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.073513. ⟨10.1063/1.3103771⟩

Structural, mechanical, and dimensional evolutions of silicon carbide (SiC) induced by heavy-ion irradiations are studied by means of Rutherford backscattering spectrometry and channeling (RBS/C), nanoindentation, and surface profilometry measurement

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::165155317518ca7f2d2695bad88fd54f
https://hal.in2p3.fr/in2p3-00674943