Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Xavier Gay"'
Publikováno v:
Materials Science Forum. 1062:209-213
In this paper we present a novel tool layout for wet chemical processing of porous silicon carbide layers. The novel tool concept includes single side processing without edge exclusion. There is no need to contact the backside of the wafer. We show S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71057658adf85b446edca399b26258ff
https://doi.org/10.4028/p-nx5r53
https://doi.org/10.4028/p-nx5r53
Autor:
Fen Lin, Mei Gi Toh, Maung Thway, Xinhang Li, Naomi Nandakumar, Xavier Gay, Bas Dielissen, Samuel Raj, Armin G. Aberle
Publikováno v:
Japanese Journal of Applied Physics. 56:08MB01
In this work, we investigate the impact of light illumination on crystalline silicon surfaces passivated with inline atomic layer deposited aluminum oxide capped with plasma-enhanced chemical vapor deposited silicon nitride. It is found that, for ded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::052b51cfe327685a3f741d6e9ee9b7a0
https://doi.org/10.7567/jjap.56.08mb01
https://doi.org/10.7567/jjap.56.08mb01
Autor:
Xavier Gay, Bernd Hintze, Elke Erben, Henry Bernhardt, Stephan P. Kudelka, Christophe Goupil, Bernhard Mercey
Publikováno v:
ECS Meeting Abstracts. :503-503
The introduction of high K dielectrics in combination with metal electrodes in deep trench (DT) DRAM storage capacitors for technology beyond 70nm ground rule is mandatory. In this paper, we study the compatibility of TiCl4-based TiN electrodes with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1920bee8a03474f1bc5b05c68de29988
https://doi.org/10.1149/ma2005-02/13/503
https://doi.org/10.1149/ma2005-02/13/503