Výsledky vyhledávání - "Xavier Aymerich"

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

Autor: K. Zhang, Xavier Aymerich, Günther Benstetter, Z. Y. Shen, Mario Lanza, V. Iglesias, Marc Porti, Montserrat Nafria, Gennadi Bersuker, A. Bayerl

Publikováno v: Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Recercat. Dipósit de la Recerca de Catalunya
instname
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2049c7a4f9fe3426c55a54b67eaff67
http://hdl.handle.net/2072/402358

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A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications

Autor: Xavier Aymerich, S. Claramunt, A. Ruiz, Montserrat Nafria, Qian Wu, Marc Porti

Publikováno v: Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

Capacitive Metal-Insulator-Semiconductor structures with graphene as interfacial layer between the HfO2 dielectric and the top electrode have been fabricated and investigated at device level and at the nanoscale with Conductive Atomic Force Microscop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c8020f24934f3d2edaf01aead8c4a44
https://ddd.uab.cat/record/249448

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Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

Autor: Francesca Campabadal, Rosana Rodriguez, M.C. Acero, Javier Martin-Martinez, Montserrat Nafria, Xavier Aymerich, Mireia Bargallo Gonzalez

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC

Trabajo presentado en la 19th Conference on Insulating Films on Semiconductors 2015, celebrado en Udine (Italia), del 29 de junio al 2 de julio de 2015
In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e29d0fd4ca6d639a86bbffe2026811f
http://hdl.handle.net/2072/407352

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Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack : pMOS and nMOS comparison and reliability implications

Autor: Javier Martin-Martinez, A. Crespo-Yepes, Montserrat Nafria, Xavier Aymerich, R. Rodriguez

In this work, the Resistive Switching (RS) phenomenon in n and pMOSFETs with ultrathin Hf based high-k dielectric is studied. Two different conductive levels, a high (HRS) and a low (LRS) resistance states can be distinguished in the dielectric. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da21e1d88fa6684522bd10dfacbe8f71
http://hdl.handle.net/2072/407331

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Temperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs

Autor: Albert Crespo-Yepes, R. Rodriguez, Javier Martin-Martinez, Xavier Aymerich, M. Nafria

In this work, the temperature dependence of the resistive switching phenomenon in metal-oxide-semiconductor field-effect-transistor (MOSFETs) with an ultra-thin Hf-based high-k dielectric is studied through analysis of the gate and drain currents for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b3c12c0996777031b7899a81174e290
http://hdl.handle.net/2072/407332

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MIS structures with interfacial graphene for ReRAM applications: a nanoscale and device level characterization

Autor: S. Claramunt, A. Ruiz, Xavier Aymerich, Qian Wu, Marc Porti, M. Nafria

Publikováno v: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

In this work, the electrical properties of Metal-Insulator-Semiconductor devices with graphene intercalated between the HfO 2 dielectric and the gate electrode were studied at the nanometer scale (with a Conductive Atomic Force Microscope) and at dev

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::574fd3b521adb61e124392cf0034750c
https://doi.org/10.1109/eurosoi-ulis49407.2020.9365299

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Tuning the conductivity of resistive switching devices for electronic synapses

Autor: M. Pedro, Javier Martin-Martinez, Mireia Bargallo Gonzalez, R. Rodriguez, Xavier Aymerich, Montserrat Nafria, Francesca Campabadal

Publikováno v: Microelectronic Engineering. 178:89-92

The implementation of electronic synapses is today one of the challenges of hardware-based neuromorphic engineering, which aims to design electronic circuits with a similar architecture and behavior those found in biological brains. In this work, the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bbacce788abf9fa11b41932fe06aff12
https://doi.org/10.1016/j.mee.2017.04.040

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Efficient methodology to extract interface traps parameters for TCAD simulations

Autor: Marc Porti, Javier Martin-Martinez, Xavier Aymerich, Montserrat Nafria, C. Couso

Publikováno v: Microelectronic Engineering. 178:66-70

In this work, a methodology to estimate ATLAS TCAD simulation parameters from experimental data is presented, with the aim of analyzing the impact of interface traps in the MOSFET threshold voltage variability of a particular technology. The method a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89bf6845be9a41fc9cca4d7119379398
https://doi.org/10.1016/j.mee.2017.04.036

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Inkjet Printed HfO2-Based ReRAMs: First Demonstration and Performance Characterization

Autor: Daniel Alonso, Rosana Rodriguez, A. Crespo-Yepes, S. Claramunt, Marc Porti, A. Cornet, G. Vescio, Montserrat Nafria, Xavier Aymerich, Albert Cirera

Publikováno v: IEEE Electron Device Letters. 38:457-460

In this letter we demonstrate for the first time, the implementation of inkjet-printed high-performance ReRAM devices based on the high-k HfO2 dielectric. Features such as high on/off current ratio and low switching voltages pave the way for low powe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ad5a9101e9f037e62e4b17217c0499a3
https://doi.org/10.1109/led.2017.2668599

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