Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Xavier Aragones"'
Publikováno v:
Sensors, Vol 23, Iss 16, p 7069 (2023)
One of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation due to transistor aging. To extend circuit operating life, the bias of the main devices within the circuit must be adjusted while the aging degradatio
Externí odkaz:
https://doaj.org/article/86fdfc165e544bee9cee9b227a864d4a
Autor:
Josep Altet, Enrique Barajas, Diego Mateo, Alexandre Billong, Xavier Aragones, Xavier Perpiñà, Ferran Reverter
Publikováno v:
Sensors, Vol 21, Iss 3, p 805 (2021)
A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, it comprised tw
Externí odkaz:
https://doaj.org/article/4594b16652a54b5498d8442a7bdd9382
Publikováno v:
Sensors, Vol 19, Iss 21, p 4815 (2019)
Differential temperature sensors can be placed in integrated circuits to extract a signature of the power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper first discusses the singularity that differential tem
Externí odkaz:
https://doaj.org/article/2d810141604745f28a1a624fadb14359
Autor:
Albert Crespo-Yepes, Javier Martin-Martinez, Enrique Barajas, Xavier Aragones, R. Rodriguez, Montserrat Nafria, Diego Mateo
Publikováno v:
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Autònoma de Barcelona
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da062c0c83c73c1ee31b5e773b93cfdc
https://hdl.handle.net/2117/343811
https://hdl.handle.net/2117/343811
Autor:
Diego Mateo, Josep Altet, Ferran Reverter, Enrique Barajas, Xavier Perpiñà, Alexandre Billong, Xavier Aragones
Publikováno v:
Sensors, Vol 21, Iss 805, p 805 (2021)
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Sensors (Basel, Switzerland)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Sensors
Volume 21
Issue 3
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Sensors (Basel, Switzerland)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Sensors
Volume 21
Issue 3
© 2021 by the authors.
A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS
A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS
Publikováno v:
Sensors, Vol 19, Iss 21, p 4815 (2019)
Sensors (Basel, Switzerland)
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Sensors (Basel, Switzerland)
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Differential temperature sensors can be placed in integrated circuits to extract a signature of the power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper first discusses the singularity that differential tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e543a67769a395ba009ed8957dd991f2
https://hdl.handle.net/2117/178636
https://hdl.handle.net/2117/178636
Autor:
Enrique Barajas, R. Rodriguez, Diego Mateo, Montserrat Nafria, Albert Crespo-Yepes, Javier Martin-Martinez, Xavier Aragones
Publikováno v:
ISCAS
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance of the topology selection
Autor:
Elisenda Roca, Xavier Aragones, Javier Diaz-Fortuny, Francisco V. Fernández, Enrique Barajas, Rafael Castro-Lopez, R. Rodriguez, Javier Martin-Martinez, Montserrat Nafria, Diego Mateo
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
idUS. Depósito de Investigación de la Universidad de Sevilla
Digital.CSIC. Repositorio Institucional del CSIC
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
idUS. Depósito de Investigación de la Universidad de Sevilla
Digital.CSIC. Repositorio Institucional del CSIC
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This work presents a novel CMOS transistor array chip to statistically characterize the effects of seve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a310c96a2b51c1e981f8cb6a273a3de
https://hdl.handle.net/2117/126049
https://hdl.handle.net/2117/126049
Autor:
Francisco V. Fernández, Rosana Rodriguez, Marc Porti, Diego Mateo, Elisenda Roca, Javier Martin-Martinez, Xavier Aragones, Francese Moll, M. Nafria, Enrique Barajas, Antonio Rubio, Rafael Castro-Lopez
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
PATMOS
Recercat. Dipósit de la Recerca de Catalunya
instname
Universitat Politècnica de Catalunya (UPC)
PATMOS
Recercat. Dipósit de la Recerca de Catalunya
instname
Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant at such supply voltages.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2d520b0f72d9f9f61fbca14e572267c
Autor:
Diego Mateo, Elisenda Roca, Xavier Aragones, Francisco V. Fernández, Rafael Castro-Lopez, Rosana Rodriguez, Montserrat Nafria, Javier Diaz-Fortuny, E. Barajas, Javier Martin-Martinez
Publikováno v:
SMACD
In this work, a CMOS transistor array is presented, which allows performing process variability, Random Telegraph Noise and BTI/CHC aging characterization in a single chip. The array, called ENDURANCE, integrates 3136 MOS transistors, for single and