Zobrazeno 1 - 9
of 9
pro vyhledávání: '"XU Ze-kun"'
Publikováno v:
Liang you shipin ke-ji, Vol 29, Iss 4, Pp 116-121 (2021)
Hydrocolloids have good functional properties,such as improving emulsification,gelation,solubility and texture of food.In bakery products,hydrocolloids are used to improve the properties of dough,bread and cake,increase sensory quality and extend she
Externí odkaz:
https://doaj.org/article/3f21f4b9a6b94f8d8a81fc5b8b2642e2
Publikováno v:
Liang you shipin ke-ji, Vol 29, Iss 3, Pp 111-117 (2021)
Starch is a very important plant polysaccharide, which is also an important industrial raw material for food production and processing.Since natural starch has poor heat, shear and acid resistance, and is easy to retrograde.It is necessary to carry o
Externí odkaz:
https://doaj.org/article/e1d04dc9220849dc81c60ce95ae90760
Akademický článek
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Akademický článek
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Publikováno v:
Axioms (2075-1680). Oct2022, Vol. 11 Issue 10, pN.PAG-N.PAG. 9p.
Publikováno v:
Journal of Iron & Steel Research; Oct2023, Vol. 30 Issue 10, p2080-2090, 11p
Publikováno v:
Journal of Iron and Steel Research International; 20230101, Issue: Preprints p1-9, 9p
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
LDMOS is widely used as an ESD protection device. In high voltage BCD technology. However, due to the use of low concentration medium voltage well in HV process, the LDMOS is easily damaged by the Kirk effect under ESD stress, and the robustness is v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5c207b2f16e3e43479da1036e690601
https://doi.org/10.1109/ipfa47161.2019.8984830
https://doi.org/10.1109/ipfa47161.2019.8984830
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
A novel silicon-controlled rectifier (SCR) named VSCR with simple layout structure is proposed in this paper. With an embedded SCR structure in a traditional diode by using p-type ESD implantation, the proposed device achieves a high ESD robustness w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e464e88111745d707ff11b60a319ef16
https://doi.org/10.1109/ipfa47161.2019.8984868
https://doi.org/10.1109/ipfa47161.2019.8984868