Initialization-Free Blue-Laser Optical Disc

Autor: LP Shi, Wei Xu, JM Li, TC Chong, PK Tan, XS Miao, KG Lim

Publikováno v: Japanese Journal of Applied Physics. 44:3612

An initialization-free method of producing blue-laser rewritable optical discs is proposed. After designing the disc, finding a suitable additional layer material and optimizing the film thickness of each layer, the initialization-free Blu-ray Disc w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::032741e0a1974475f4f9f39acee12080
https://doi.org/10.1143/jjap.44.3612

Self-Rectifying Memristors for Three-Dimensional In-Memory Computing.

Autor: Ren SG; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Dong AW; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Yang L; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Xue YB; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Li JC; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Yu YJ; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Zhou HJ; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Zuo WB; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China., Li Y; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China., Cheng WM; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China., Miao XS; School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Jan; Vol. 36 (4), pp. e2307218. Date of Electronic Publication: 2023 Nov 27.

Ultrafast and stable phase transition realized in MoTe 2 -based memristive devices.

Autor: He HK; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China. yangrui@hust.edu.cn.; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Jiang YB; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Yu J; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Yang ZY; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China. yangrui@hust.edu.cn., Li CF; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, NRC (Nanostructure Research Centre), Wuhan University of Technology, China., Wang TZ; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China. yangrui@hust.edu.cn.; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Dong DQ; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China. yangrui@hust.edu.cn.; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Zhuge FW; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Xu M; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China. yangrui@hust.edu.cn., Hu ZY; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, NRC (Nanostructure Research Centre), Wuhan University of Technology, China., Yang R; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China. yangrui@hust.edu.cn.; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China., Miao XS; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China. yangrui@hust.edu.cn.

Publikováno v: Materials horizons [Mater Horiz] 2022 Mar 07; Vol. 9 (3), pp. 1036-1044. Date of Electronic Publication: 2022 Mar 07.

Enhancing LiAlO X synaptic performance by reducing the Schottky barrier height for deep neural network applications.

Autor: Fu Y; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China. heyuhui@hust.edu.cn miaoxs@hust.edu.cn., Dong B, Su WC, Lin CY, Zhou KJ, Chang TC, Zhuge F, Li Y, He Y, Gao B, Miao XS

Publikováno v: Nanoscale [Nanoscale] 2020 Nov 26; Vol. 12 (45), pp. 22970-22977.

Pt 5 Se 4 Monolayer: A Highly Efficient Electrocatalyst toward Hydrogen and Oxygen Electrode Reactions.

Autor: Yuan JH; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China., Li LH; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China., Zhang W; Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States., Xue KH; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China., Wang C; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China., Wang J; School of Science, Wuhan University of Technology, Wuhan 430070, China., Miao XS; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China., Zeng XC; Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2020 Mar 25; Vol. 12 (12), pp. 13896-13903. Date of Electronic Publication: 2020 Mar 13.