Zobrazeno 1 - 10
of 962
pro vyhledávání: '"XNOR gate"'
Autor:
Pritty
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-18 (2024)
Abstract Field Programmable Gate Arrays are extensively used in space, military, and commercial sectors due to their reprogrammable nature. In high-safety environments, ensuring fault tolerance is crucial to improving the performance of electronic an
Externí odkaz:
https://doaj.org/article/9cb6c4f77ae64de18c4339a78ec7c604
Publikováno v:
Journal of Electronic Science and Technology, Vol 19, Iss 3, Pp 100078- (2021)
To fill the continuous needs for faster processing elements with less power consumption causes large pressure on the complementary metal oxide semiconductor (CMOS) technology developers. The scaling scenario is not an option nowadays and other techno
Externí odkaz:
https://doaj.org/article/efce05abb6974f17a26086f0b3cdf77c
Publikováno v:
IEEE Electron Device Letters. 43:142-145
An oxide fin-based AND flash memory synaptic device is proposed and fabricated using a spacer patterning technology for a hardware-based binary neural network (BNN). A fin-like curved channel structure provides local electric field enhancement, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b4c9e81ebd787134808044f224843ac
https://doi.org/10.1109/led.2021.3125966
https://doi.org/10.1109/led.2021.3125966
Publikováno v:
IEEE Electron Device Letters. 42:1607-1610
In this letter, we propose a double-gated ferroelectric-gate field-effect-transistor (DG-FeFET) for processing-in-memory (PIM) operations in a single device for the first time. The proposed device is highly compatible with a conventional fin field-ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6364527db0f84650dd8460df44d0ac4d
https://doi.org/10.1109/led.2021.3116797
https://doi.org/10.1109/led.2021.3116797
Autor:
Zhufei Chu, Huiming Tian
Publikováno v:
Journal of Computer Science and Technology. 36:1145-1154
Inverters or logic primitives that have complement attributes are essential to building a logical complement system. NAND and NOR operations which have complement attributes are of high interest for complementary metal-oxide-semiconductor (CMOS) tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b57b4ce12694e6a220c0a834ba3d40
https://doi.org/10.1007/s11390-021-0898-7
https://doi.org/10.1007/s11390-021-0898-7
Publikováno v:
Journal of Computational Electronics. 20:1964-1976
We have investigated the spin-Hall effect (SHE)-assisted spin transfer torque (STT) switching mechanism in a three-terminal MTJ device developed using p-MTJ (perpendicular magnetic tunnel junction) and heavy metal materials of high atomic number, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0408c6ee57fb85428cd27a718d4051b3
https://doi.org/10.1007/s10825-021-01759-8
https://doi.org/10.1007/s10825-021-01759-8
Publikováno v:
Analog Integrated Circuits and Signal Processing. 109:225-239
Electronic circuits operating in the radiation intensive environment like space, are subject to a barrage of cosmic particles like neutrons, protons, and heavy ions which can cause voltage glitches in various nodes of circuits causing single event up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c408937a4bb6b425d2ecdb1b209cf38
https://doi.org/10.1007/s10470-021-01926-8
https://doi.org/10.1007/s10470-021-01926-8
Publikováno v:
International Journal of Circuit Theory and Applications. 49:3597-3606
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b8a38c77e3cd42a18bdff209b8be456
https://doi.org/10.1002/cta.3109
https://doi.org/10.1002/cta.3109
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:2221-2233
This article (Colonnade) presents a fully digital bit-serial compute-in-memory (CIM) macro. The digital CIM macro is designed for processing neural networks with reconfigurable 1–16 bit input and weight precisions based on bit-serial computing arch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35cdf8587e3d4df474af3b480c5e2ebc
https://doi.org/10.1109/jssc.2021.3061508
https://doi.org/10.1109/jssc.2021.3061508
Autor:
Dileep Dwivedi, Manoj Kumar
Publikováno v:
IETE Journal of Research. :1-10
This paper presents a novel low-power four-stage voltage controlled ring oscillator (VCRO) designed in the TSMC 180 nm CMOS technology. Each stage in the proposed VCRO consists of a differential de...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4cb5538842c92f1a8693459b6929afc
https://doi.org/10.1080/03772063.2021.1942244
https://doi.org/10.1080/03772063.2021.1942244