Zobrazeno 1 - 10
of 359
pro vyhledávání: '"X.S. Miao"'
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Autor:
Dilmac, Sayra1 (AUTHOR) sdilmac@houstonmethodist.org, Hamurcu, Zuhal2 (AUTHOR) zhamurcu@erciyes.edu.tr, Ozpolat, Bulent1 (AUTHOR) bozpolat@houstonmethodist.org
Publikováno v:
Cancers. Nov2024, Vol. 16 Issue 22, p3823. 21p.
Autor:
Samarathunga, Prabhath1 (AUTHOR) prabhath.samarathunga@strath.ac.uk, Rezaei, Hossein2 (AUTHOR) hossein.rezaei@oulu.fi, Lokumarambage, Maheshi1 (AUTHOR) maheshi.lokumarambage@strath.ac.uk, Sivalingam, Thushan2 (AUTHOR) thushan.sivalingam@oulu.fi, Rajatheva, Nandana2 (AUTHOR) nandana.rajatheva@oulu.fi, Fernando, Anil1 (AUTHOR) anil.fernando@strath.ac.uk
Publikováno v:
Algorithms. Nov2024, Vol. 17 Issue 11, p492. 20p.
Publikováno v:
IEEE Transactions on Electron Devices. 53:56-62
A general macromodel of the phase change random access memory (PCRAM) elements for use in HSPICE-based computer simulator is proposed in this paper by introducing physical models of PCRAM elements. It can simulate the dc and transient behavior of PCR
Publikováno v:
Materials Research Bulletin. 47:2974-2976
FePt multilayer films were deposited on Si(1 0 0) substrate with thermally grown SiO2 film and sputtered Ag underlayer at room temperature by dc magnetron sputtering and subsequently annealing in vacuum. Experimental results suggest that proper thick
Publikováno v:
International Photonics and Optoelectronics Meetings.
We proposed a new type of Multivibrator based on memristor. Its mechanism and oscillate conditions have been analyzed systematically.
Autor:
Xiong, Sanya1 (AUTHOR), Cui, Dengshuai1 (AUTHOR), Yu, Naibiao1 (AUTHOR), He, Ruiqiu1 (AUTHOR), Zhu, Haojie1 (AUTHOR), Wei, Jiacheng1 (AUTHOR), Wang, Mingyang1 (AUTHOR), Duan, Wenxin1 (AUTHOR), Huang, Xiaoqing1 (AUTHOR), Ge, Liming1 (AUTHOR), Guo, Yuanmei1 (AUTHOR) gyuanmei@hotmail.com
Publikováno v:
Animals (2076-2615). Jul2024, Vol. 14 Issue 14, p2109. 15p.
Publikováno v:
Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference.
We present a two terminal HSpice model for chalcogenide based phase change memory (CRAM) element. By including physical models of CRAM programming, this model can simulate not only the resistance change by different electrical pulses, but also temper
Autor:
P.K. Tan, K.P. Wong, H.B. Yao, H. Meng, X.S. Miao, L.P. Shi, K.G. Lim, K.J. Yi, R. Zhao, T.C. Chong.
Publikováno v:
Optical Data Storage.
We have studied the deformation of polycarbonate substrate during DOW process of phase-change optical disc. This deformation was one of the factors, which reduced the overwriting cycle.
Autor:
Zhang, Ruipeng1 (AUTHOR) zrprepeal@stu.xjtu.edu.cn, Feng, Yanxiang1 (AUTHOR) fengyanxiang@xjtu.edu.cn, Yang, Yikang1 (AUTHOR) yangyk74@xjtu.edu.cn, Li, Xiaoling2 (AUTHOR) xiaolingli@chd.edu.cn, Li, Hengnian3 (AUTHOR) henry_xscc@mail.xjtu.edu.cn
Publikováno v:
Remote Sensing. Jun2024, Vol. 16 Issue 12, p2184. 25p.