Zobrazeno 1 - 10
of 63
pro vyhledávání: '"X.J Ning"'
Publikováno v:
Acta Horticulturae. :295-300
The objective of this study was to figure out the effects of different dilution ratios of biogas slurry on the growth and yield of tomato under the same N input in greenhouse cultivation. The experiment was carried out with greenhouse tomato grown in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a6a7eacb735d361c5fd3789be2a8f8e
https://doi.org/10.17660/actahortic.2012.927.34
https://doi.org/10.17660/actahortic.2012.927.34
Publikováno v:
Acta Horticulturae. :989-994
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935aeaacc0bca1c1059f461940d5f093
https://doi.org/10.17660/actahortic.2012.927.122
https://doi.org/10.17660/actahortic.2012.927.122
Publikováno v:
Materials Science and Engineering: B. 134:165-171
A selective SiGe epitaxial growth for strained CMOS Si technology was developed for 65 nm logic technology generation that integrates with Ni silicidation. A 36% device performance improvement for PMOS devices was achieved using this technology. Key
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71c53ba31232caaa3cd9d105454a88e6
https://doi.org/10.1016/j.mseb.2006.06.053
https://doi.org/10.1016/j.mseb.2006.06.053
Autor:
David L. Rath, Rainer Florian Schnabel, T. Joseph, Kenneth P. Rodbell, Lynne Gignac, R. G. Filippi, X.J Ning, Chenming Hu, Gregory Costrini, Timothy D. Sullivan, Stefan Weber, G. Stojakovic, Lawrence A. Clevenger, Edward W. Kiewra, Roy C. Iggulden, M. Gribelyuk, R.V.S.S.N. Ravikumar, T. Kane, Jeff Gambino
Publikováno v:
Thin Solid Films. 388:303-314
The electromigration behavior and microstructural features of AlCu Dual Damascene lines are compared to those of AlCu metal reactively ion etched (RIE) lines. Test structures consist of 0.18-, 0.35- and 1.33-μm-wide lines terminated by W diffusion b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b7bc07472d1937181aff8531c7f159a
https://doi.org/10.1016/s0040-6090(01)00855-0
https://doi.org/10.1016/s0040-6090(01)00855-0
Autor:
D. Tobben, G.Y. Lee, Roy C. Iggulden, Stefan J. Weber, Maria Ronay, Jeff Gambino, Zhijian Lu, R.F. Schnabel, Clevenger Leigh Anne H, Gregory Costrini, R. Ramachandran, X.J. Ning, R. G. Filippi, Chenting Lin, David M. Dobuzinsky
Publikováno v:
Microelectronic Engineering. 50:265-270
This paper presents an overview of issues associated with Al dual damascene process technology. Different integration schemes are discussed and characteristics of metal fill, planarization and reliability are highlighted. Finally, a comparison is mad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c599d31a1bba637d89c644048e369c6
https://doi.org/10.1016/s0167-9317(99)00291-9
https://doi.org/10.1016/s0167-9317(99)00291-9
Publikováno v:
Acta Materialia. 44:2265-2283
Low temperature (20–900°C) plastic deformation in TiC 0.91 single crystals has been studied using microindentations on (111), (001) and (110) surfaces, the dislocation structures around microindents being characterized by transmission electron mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::244b97d93a3d4f888b026e07740696eb
https://doi.org/10.1016/1359-6454(95)00360-6
https://doi.org/10.1016/1359-6454(95)00360-6
Autor:
X.J. Ning, Pirouz Pirouz
Publikováno v:
Acta Materialia. 44:2127-2143
The study of different stages of boron diffusion by plan-view and cross-sectional transmission electron microscopy shows that, as in the classical model of Matthews, misfit dislocation half-loops are initially generated at the surface. The Burgers ve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28fff1be1d53d3f919ecb816a66e7f19
https://doi.org/10.1016/1359-6454(95)00295-2
https://doi.org/10.1016/1359-6454(95)00295-2
Publikováno v:
Journal of Crystal Growth. 158:480-490
The morphology and microstructure of 3C-SiC thin films grown on Si(111) substrate by chemical vapor deposition at ambient pressure has been investigated. Hexamethyldisilane (HMDS) was used as the source gas and a 8% H 2 + Ar mixture as the carrier ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3df498a3ecc8ab975ab23f2dd2eaf55
https://doi.org/10.1016/0022-0248(95)00464-5
https://doi.org/10.1016/0022-0248(95)00464-5
Publikováno v:
International Thermal Spray Conference.
In this study, Al-Sn binary alloy coatings were prepared with Al-5wt.%Sn (Al-5Sn) and Al-10wt.%Sn (Al-10Sn) gas atomized powders by low pressure and high pressure cold spray process. The microstructure and microhardness of the coatings were character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1091a5bdec28337914d6f6759ff41ea
https://doi.org/10.31399/asm.cp.itsc2008p1191
https://doi.org/10.31399/asm.cp.itsc2008p1191
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
As aluminum reactive ion etch (RIE) technology extends to sub-0.20 /spl mu/m technology, a void-free back-end-of-line (BEOL) gap-fill process is one of the major challenges for interconnects. When a stitched word line architecture is employed, the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebce1e4239b99041522cd8df40673984
https://doi.org/10.1109/iitc.1999.787106
https://doi.org/10.1109/iitc.1999.787106