Zobrazeno 1 - 10
of 139
pro vyhledávání: '"X.B. Mei"'
Autor:
Kevin M. K. H. Leong, M. Lange, X.B. Mei, Po-Hsin Liu, W. Yoshida, Khanh Nguyen, Ben S. Gorospe, William R. Deal, Joe Zhou, Alexis Zamora
Publikováno v:
IEEE Microwave and Wireless Components Letters. 26:837-839
In this letter, a packaged Low Noise Amplifier (LNA) operating at 670 GHz is presented. The LNA uses a new generation of 25 nm InP HEMT with 1.5 THz $\text {f}_{\mathrm {MAX}}$ . The eight-stage amplifier shows approximately 16 dB associated gain in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19287368ab2ca821d2ce7a4383bc44eb
https://doi.org/10.1109/lmwc.2016.2605458
https://doi.org/10.1109/lmwc.2016.2605458
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
The last decade has seen tremendous increase in the operating frequency of transistor based in electronics. With InP HEMTs reaching 1.5 THz f max and 610 GHz fr, operating frequencies of integrated circuit amplifiers have seen corresponding increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6afa749a65f1d320f479e82a9365ce71
https://doi.org/10.1109/iedm.2016.7838502
https://doi.org/10.1109/iedm.2016.7838502
Autor:
D. Pukala, Greg Boll, Richard Lai, Charles R. Lawrence, Andy Fung, Lorene Samoska, X.B. Mei, Douglas Dawson, Pekka Kangaslahti, T. C. Gaier, Mikko Varonen
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 2:186-192
We report on two-port on-wafer vector network analyzer measurements in the 325-508 GHz frequency band. Measurements are made with prototype GGB Industries Inc. WR2.2 (325-500 GHz) coplanar waveguide probes and OML Inc. WR2.2 frequency extenders. New
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f284df5e3a50fd7351839a0732181dc
https://doi.org/10.1109/tthz.2011.2182369
https://doi.org/10.1109/tthz.2011.2182369
Autor:
Todd Gaier, William R. Deal, A. Fung, Richard Lai, X.B. Mei, M. Lange, Liu Po-hsin, Vesna Radisic, J. Uyeda, W. Yoshida, Michael E. Barsky
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 55:2719-2726
In this paper, we present the framework for developing the first working power amplifiers at sub-millimeter-wave frequencies. The technology is made possible by an advanced InP HEMT transistor. A three-stage power amplifier is presented, which uses a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::097301943429e77b9a23807f73d093b1
https://doi.org/10.1109/tmtt.2007.910012
https://doi.org/10.1109/tmtt.2007.910012
Autor:
M. Lange, W. Yoshida, Ben S. Gorospe, X.B. Mei, William R. Deal, J. Lee, Kevin M. K. H. Leong, Alex Zamora
Publikováno v:
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We show on-wafer measured data for four amplifier designs targeting the WR1.5 band. One design shows gain exceeding 20 dB over the entire WR1.5 bandwidth. We show the maturation of the InP HEMT process, and show that now fewer gain stages are necessa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f504d4e9457390b357324c5bd07d872
https://doi.org/10.1109/csics.2015.7314487
https://doi.org/10.1109/csics.2015.7314487
Autor:
Ben S. Gorospe, William R. Deal, X.B. Mei, M. Lange, Alex Zamora, W. Yoshida, Kevin M. K. H. Leong
Publikováno v:
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
In the paper, we report on recent progress in scaling InP HEMT MMIC technology to Submillimeter (SMMW) and Terahertz (THz) frequencies. We show that amplification has reached 0.85 THz, with low noise and power amplification in packaged amplifiers at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84694940100a03583a49828251c4e034
https://doi.org/10.1109/csics.2015.7314521
https://doi.org/10.1109/csics.2015.7314521
Publikováno v:
2015 IEEE MTT-S International Microwave Symposium.
The operating frequency of InP integrated circuits has pushed well into the Submillimeter wave frequency band, with amplification reported to 1 THz (1,000 GHz). This paper provides an overview of current performance and potential application of InP H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c60c9353e64382bc74aacc034766f3f
https://doi.org/10.1109/mwsym.2015.7167011
https://doi.org/10.1109/mwsym.2015.7167011
Publikováno v:
2014 IEEE MTT-S International Microwave Symposium (IMS2014).
In this paper, recent work on pushing InP HEMT amplifier technology to 850 GHz is reported. In particular, we have demonstrated on-wafer gain at this frequency. To our knowledge, this is the first time gain has been reported at this frequency. This a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09fa0e681fcde26656d63876e311af0d
https://doi.org/10.1109/mwsym.2014.6848588
https://doi.org/10.1109/mwsym.2014.6848588
Autor:
Brian Bayuk, Richard Lai, X.B. Mei, W. Yoshida, William R. Deal, Andy Fung, Vesna Radisic, T. C. Gaier, Lorene Samoska, Po-Hsin Liu, J. Uyeda
Publikováno v:
IEEE Microwave and Wireless Components Letters. 18:542-544
In this letter, a new power amplifier topology is demonstrated which allows the use of large (120 mum/transistors) at extremely high frequency. This is accomplished by using compact matching networks consisting of coplanar waveguide transmission line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc17c0ee6a8742813c78683fe01ecfa5
https://doi.org/10.1109/lmwc.2008.2001017
https://doi.org/10.1109/lmwc.2008.2001017
Autor:
Vesna Radisic, Richard Lai, J. Uyeda, W. Yoshida, X.B. Mei, William R. Deal, Andy Fung, Michael E. Barsky, Lorene Samoska, P.S. Liu, T. C. Gaier
Publikováno v:
IEEE Microwave and Wireless Components Letters. 18:419-421
We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but lim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f0dde6e2875b37935947171f7e851a2
https://doi.org/10.1109/lmwc.2008.922713
https://doi.org/10.1109/lmwc.2008.922713