Zobrazeno 1 - 10
of 269
pro vyhledávání: '"X. Jorda"'
Autor:
X. Jorda, Filip Bauwens, Xavier Perpiñà, Marnix Tack, Miquel Vellvehi, Jaume Roig-Guitart, Manuel Hernández Fernández
Publikováno v:
IEEE Transactions on Industrial Electronics. 64:9012-9022
This paper studies by experimentation and physics-based simulation the Short-Circuit (SC) capability of several normally-off 600–650 V Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs): cascodes, p-GaN, and GaN Metal–Insulator–Semi
Autor:
Xavier Perpiñà, X. Jorda, Jaume Roig, Manuel Hernández Fernández, Filip Bauwens, Miquel Vellvehi, Marnix Tack
Publikováno v:
IEEE Electron Device Letters. 38:505-508
Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V nor
Publikováno v:
IEEE Transactions on Industrial Electronics. 62:7774-7785
The functionality and consumption of a Radio Frequency IDentification Integrated Circuit (RFID IC) supplied by inductive power transfer has been noninvasively analyzed. This has been done by means of an InfraRed Lock-In Thermography (IR-LIT) system a
Autor:
Edorta Ibarra, Jose Rebollo, Asier Matallana, Jon Andreu, X. Jorda, I. López, Jose Ignacio Garate
Publikováno v:
Renewable and Sustainable Energy Reviews. 113:109264
A large number of factors such as the increasingly stringent pollutant emission policies, fossil fuel scarcity and their price volatility have increased the interest towards the partial or total electrification of current vehicular technologies. Thes
Autor:
M. Bosman, A. Esteve, L. Gabbanelli, X. Jordan, A. López-Gay, M. Manera, M. Martínez, P. Masjuan, Ll.M. Mir, J. Paradells, A. Pignatelli, I. Riu, V. Vitagliano
Publikováno v:
Infectious Disease Modelling, Vol 8, Iss 1, Pp 145-158 (2023)
Analytic compartmental models are currently used in mathematical epidemiology to forecast the COVID-19 pandemic evolution and explore the impact of mitigation strategies. In general, such models treat the population as a single entity, losing the soc
Externí odkaz:
https://doaj.org/article/cdbf6a47baf4481e8d0b984cdb981028
Autor:
J. M. G. Kunen, R.J. Werkhoven, Miquel Vellvehi, X. Jorda, Xavier Perpiñà, P. Bancken, Jiri Jakovenko, P.J. Bolt
Publikováno v:
IEEE Transactions on Power Electronics, 7, 30, 3876-3891
This paper studies the thermal influence of a light-emitting diode (LED) driver on a retrofit LED lamp, also reporting on a procedure for its thermal characterization and multiscale modeling. In this analysis, temperature is measured by infrared ther
Autor:
José Millan, Dominique Tournier, Mihaela Alexandru, Miquel Vellvehi, Philippe Godignon, Viorel Banu, X. Jorda, Josep Montserrat
Publikováno v:
IEEE Transactions on Industrial Electronics. 62:3182-3191
This paper is an important step toward the development of complex integrated circuit (IC) control electronics that have to attend to high-temperature environment power applications. We present in premiere a prototype set of essential mixed-signal ICs
Publikováno v:
Microelectronics Reliability. 54:1839-1844
This work focuses on determining the switching limits in temperature for Reverse Conducting IGBTs and compares them to “conventional” IGBTs based on Trench technologies, all them belonging to 600 V–50 A application scenario. After, their leakag
Autor:
Philippe Godignon, Xavier Perpiñà, Maxime Berthou, X. Jorda, Miquel Vellvehi, Josep Montserrat, Viorel Banu, Javier Ponce de León
Publikováno v:
Microelectronics Reliability. 54:2207-2212
This work analyzes the effects of temperature on the destruction of 1.2 kV–10 A silicon carbide (SiC) tungsten-based Schottky barrier diodes (W-SBD’s) under surge current tests. First, W-SBD’s were aged and tested up to failure under surge curr
Autor:
Viorel Banu, Philippe Godignon, X. Jorda, Miquel Vellvehi, Luis A. Navarro, Josep Montserrat, Xavier Perpiñà
Publikováno v:
IEEE Transactions on Power Electronics. 29:2261-2271
Currently, the demand by new application scenarios of increasing operating device temperatures in power systems is requiring new die-attach materials with higher melting points and suitable thermomechanical properties. This makes the die-attach mater