Zobrazeno 1 - 10
of 28
pro vyhledávání: '"X. Gagnard"'
Autor:
B. Giffard, P. Coudrain, C. Lagahe-Blanchard, X. Gagnard, Perrine Batude, P. Magnan, Pascal Ancey, M. Vinet, Yvon Cazaux, A. Pouydebasque, C. Leyris, A. Castex
Publikováno v:
IEEE Transactions on Electron Devices. 56:2403-2413
A new 3-D CMOS image sensor architecture is presented as a potential candidate for submicrometer pixels. To overcome the scaling challenge related to miniaturized pixel design rules, far beyond traditional 3-D stacking alignment capabilities, a seque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f8765ab529e36ba30321fd1ea786b4c
https://doi.org/10.1109/ted.2009.2030990
https://doi.org/10.1109/ted.2009.2030990
A spectroscopic ellipsometry investigation of RF‐sputtered crystalline vanadium pentoxide thin films
Autor:
X. Gagnard, Jean-Pierre Pereira-Ramos, Sami Oukassi, R. Salot, J. P. Piel, J. L. Stehlé, D. Zahorski
Publikováno v:
physica status solidi c. 5:1109-1112
Vanadium pentoxide (V2O5) raised much interest, in several fields, especially relating to thin film lithium microbatteries. Yet, literature mentioned different results about a variation of electrochemical performance of these films with thickness. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::602da727da120a5767d499749c780626
https://doi.org/10.1002/pssc.200777744
https://doi.org/10.1002/pssc.200777744
Autor:
M. Neyret, D. Henry, Sophie Verrun, E. Saugier, X. Gagnard, J. Charbonnier, N. Sillon, S. Cheramy, L. Bonnot, C. Brunet-Manquat, P. Chausse
Publikováno v:
3DIC
In this paper, the technological bricks specifically developed for 3D integration of a set top box demonstrator will be presented. The integration flow was based on the 45 nm technology top chip stacked on a 130 nm technology active bottom wafer [1].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::696ea27387bf9e82b71c8df425afa0e0
https://doi.org/10.1109/3dic.2009.5306561
https://doi.org/10.1109/3dic.2009.5306561
Autor:
B. Giffard, N. Moussy, Perrine Batude, P. Magnan, X. Gagnard, Pascal Ancey, P. Coudrain, Maud Vinet, C. Leyris, Yvon Cazaux, A. Pouydebasque, S. Ricq
Publikováno v:
2008 IEEE International Electron Devices Meeting.
This paper presents an innovative 3D architecture capable of overcoming pixel miniaturization drawbacks. Back-illuminated photodiodes are realized on a first silicon layer, while readout transistors are located on a second silicon layer. Implications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7197780839b41e2a83bbb291407cbe1b
https://doi.org/10.1109/iedm.2008.4796670
https://doi.org/10.1109/iedm.2008.4796670
Autor:
M. Devulder, Nathalie Rolland, M. Aid, Francois Danneville, R. Cuchet, S. Pruvost, Sylvie Lepilliet, I. Telliez, Denis Pellissier, Gilles Dambrine, Pascal Ancey, X. Gagnard
Publikováno v:
Proceedings of 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007, 2007, United States. pp.137-140, ⟨10.1109/RFIC.2007.380850⟩
IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007, 2007, United States. pp.137-140, ⟨10.1109/RFIC.2007.380850⟩
This paper presents a low area, low consumption, 40 GHz low noise amplifier (LNA), a down-converter and an oscillator, from which the performance of a 40 GHz wireless receiver can be estimated. The circuits were realized using a post-processing BCB a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb9b4617b9463bf4f39269a4260ef5b4
https://hal.archives-ouvertes.fr/hal-00284026
https://hal.archives-ouvertes.fr/hal-00284026
Autor:
Pascal Ancey, X. Gagnard, R. Hida, M. Audoin, B. Orlando, R. Cuchet, Bernard Viala, D. Pellissier-Tanon
Publikováno v:
INTERMAG 2006 - IEEE International Magnetics Conference.
5.6 mm times 5.6 mm integrated toroidal inductors with reduced thickness down to 200 mum have been realized. A high inductance-to-dc resistance ratio have been achieved using a toroidal geometry. The realization features thick Cu winding and a thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5927e04facc05cfe234cbca85e1f7bf
https://doi.org/10.1109/intmag.2006.375560
https://doi.org/10.1109/intmag.2006.375560
Autor:
O. Bonnaud, X. Gagnard
Publikováno v:
Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548).
Previous works (Gagnard and Bonnaud, Microelectron. Reliability vol. 39, pp. 75-763, 1999, and Proc. SPIE vol. 4182, pp. 142-50, 2000) demonstrated the possibility of realization of the gate oxide lifetime by a unique measurement based on leakage cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24025241356ae3b911a50f7053b824e2
https://doi.org/10.1109/ipfa.2001.941476
https://doi.org/10.1109/ipfa.2001.941476
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