Zobrazeno 1 - 10
of 36
pro vyhledávání: '"X. Chauffleur"'
Autor:
Jean-Pierre Fradin, Michel Mermet-Guyennet, X. Chauffleur, Jose Saiz, Alberto Castellazzi, Mauro Ciappa, P. Solomalala
Publikováno v:
Microelectronics Reliability. 47:1343-1348
To develop reliable integrated power electronics, it is paramount to consider the coupling between electrical, thermal and mechanical effects. Though essential for final validation, experimental analysis is time-consuming, especially when trying out
Autor:
Colette Levade, B. Khong, Emmanuel Scheid, Philippe Dupuy, Patrick Tounsi, Marc Legros, G. Vanderschaeve, X. Chauffleur
Publikováno v:
Microelectronics Reliability. 47:1735-1740
A method based on the failure analysis of power MOSFET devices tested under extreme electrothermal fatigue is proposed. Failure modes are associated to several structural changes that have been investigated through acoustic, electron and ion microsco
Autor:
Patrick Tounsi, Jean-Marie Dorkel, Jean-Pierre Fradin, Marc Legros, B. Khong, X. Chauffleur, Colette Levade, A. Deram, G. Vanderschaeve, Philippe Dupuy
Publikováno v:
Microelectronics Reliability. 45:1717-1722
In this paper, an innovative methodology for predictive reliability of intelligent power devices used in automotive applications is considered. Reliability management is done at all levels of the technological process. This method is based on the fai
Autor:
Katia Grenier, L Dantas, J. Kuchenbecker, David Dubuc, F. Flourens, Robert Plana, X Chauffleur, Patrick Pons, L. Rabbia, A. Boukabache
Publikováno v:
Sensors and Actuators A: Physical. 112:148-154
We present in this paper results on mechanical behavior of RF switches. The simulations show that the mechanical behavior of the switch is very sensitive to its shape (flat or wavy). The wavy parts of the bridge allow a better relaxation of gold laye
Autor:
Romain Desplats, Philippe Perdu, Dean Lewis, X. Chauffleur, Jean-Pierre Fradin, Felix Beaudoin
Publikováno v:
Microelectronics Reliability. 41:1477-1482
Publikováno v:
Sensors and Actuators A: Physical. 46:121-124
The behaviour of a capacitive pressure sensor built from a deformable silicon plate bonded to a Pyrex 7740 substrate has been simulated numerically with finite-element calculations. The comparison of 3D simulations with experimental data has shown th
Publikováno v:
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Works on predictive reliability of IC packages are mostly dedicated to the failure of solder joints as structural material. The failure of interfaces, as links between two different materials, is often neglected in the process. This paper presents a
Publikováno v:
2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.
The aim of this paper is to present the work we realized to determinate the strength of interfaces in a package. The work consisted of coupling experimental and modelling results obtained on the package. The proposed method is very interesting becaus
Publikováno v:
2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE).
Today, the reliability forecast is a new challenge for the electronic packaging industry. This paper deals with a 3 dimensional electro-thermo-mechanical modeling method for reliability studies of MOSFET transistor. This modeling method increases the
Publikováno v:
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.
Based on the use of a boundary element solver, a fully coupled electrical and thermal 3D modeling for low voltage power MOS transistors is proposed. The analogy between the 3D heat conduction and the 3D electrical conduction is turned to good account