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pro vyhledávání: '"X. Boddaert"'
Akademický článek
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Akademický článek
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Publikováno v:
Microelectronics Reliability. 42:1307-1310
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3bfa6792b2b33c798c236ee47fe2b9
https://doi.org/10.1016/s0026-2714(02)00140-3
https://doi.org/10.1016/s0026-2714(02)00140-3
Publikováno v:
Microelectronics Reliability. 43:1767-1769
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::083fdfeaefd142baedf0aefe38b8f5d4
https://doi.org/10.1016/s0026-2714(03)00297-x
https://doi.org/10.1016/s0026-2714(03)00297-x
Publikováno v:
Surface and Interface Analysis. 30:531-533
Oxynitride deep-ultraviolet antireflective coating (DARC) of Si wafers is used to get better lithography at 248 nm. The thickness and the optical parameters of these films have to be optimized to get good and reproducible results. In this context, DA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f79f60e25dedfa668715a0c93f7b30
https://doi.org/10.1002/1096-9918(200008)30:1<531::aid-sia840>3.0.co
https://doi.org/10.1002/1096-9918(200008)30:1<531::aid-sia840>3.0.co
Publikováno v:
Materials Science Forum. :85-90
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1204e02121c2184873fd335f9b9054f1
https://doi.org/10.4028/www.scientific.net/msf.38-41.85
https://doi.org/10.4028/www.scientific.net/msf.38-41.85
Autor:
S. Squedin, Y. Danto, X. Boddaert, C. Porcheron, A. Denolle, L. Bechou, A. Crottini, Monique Renaud, D. Laffitte, A. Coquelin, S. Huyghe, D. Keller, C. Ollivier, P. Volto
Publikováno v:
International Conference onIndium Phosphide and Related Materials, 2003..
We report results of ageing tests (270 mA, 100/spl deg/C) applied to 1.55 /spl mu/m Semiconductor Optical Amplifier (SOA) of 500 /spl mu/m length active region for reliability investigations and show the strong relationship between functional paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::335a34a0eee82dec13666e4acd10e5ba
https://doi.org/10.1109/iciprm.2003.1205341
https://doi.org/10.1109/iciprm.2003.1205341
Publikováno v:
52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345).
Qualification of opto-electronic devices is a mandatory but complex activity to perform in a fast changing technical environment and under a strong market pressure. In this paper, we analyze the advantages and drawbacks of the traditional qualificati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e2d71c51ab9ab8cd1892965a19176b0
https://doi.org/10.1109/ectc.2002.1008149
https://doi.org/10.1109/ectc.2002.1008149
Publikováno v:
Journal of Applied Physics. 67:4385-4387
The introduction rate of a hydrogen‐related bistable electron trap, formed by a 150 °C plasma annealing, depends strongly on thermal preannealing. A pure thermal 850 °C preanneal completely anneals the native defects EL6 and EL3, reduces the nati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6aaee5233619d06fc606ba4ea78897
https://doi.org/10.1063/1.344911
https://doi.org/10.1063/1.344911
Publikováno v:
Physical review. B, Condensed matter. 41(8)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c263225f34a163ade150f8ec75c889b
https://pubmed.ncbi.nlm.nih.gov/9994389
https://pubmed.ncbi.nlm.nih.gov/9994389