Zobrazeno 1 - 10
of 235
pro vyhledávání: '"X Q, Pan"'
Autor:
J. W. Lee, K. Eom, T. R. Paudel, B. Wang, H. Lu, H. X. Huyan, S. Lindemann, S. Ryu, H. Lee, T. H. Kim, Y. Yuan, J. A. Zorn, S. Lei, W. P. Gao, T. Tybell, V. Gopalan, X. Q. Pan, A. Gruverman, L. Q. Chen, E. Y. Tsymbal, C. B. Eom
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
In-plane polarized ferroelectric thin films typically exhibit complicated multidomain states, not desirable for optoelectronic device performance. Here, the authors combine interfacial symmetry engineering and anisotropic strain to design single-doma
Externí odkaz:
https://doaj.org/article/17eb12170f19442aaaaa33ca770ee35b
Autor:
S. Ryu, H. Zhou, T. R. Paudel, N. Campbell, J. Podkaminer, C. W. Bark, T. Hernandez, D. D. Fong, Y. Zhang, L. Xie, X. Q. Pan, E. Y. Tsymbal, M. S. Rzchowski, C. B. Eom
Publikováno v:
APL Materials, Vol 10, Iss 3, Pp 031115-031115-7 (2022)
Atomically flat (111) interfaces between insulating perovskite oxides provide a landscape for new electronic phenomena. For example, the graphene-like coordination between interfacial metallic ion layer pairs can lead to topologically protected state
Externí odkaz:
https://doaj.org/article/23bf9db3d5dc4e59b184d47b06a3d941
Publikováno v:
Frontiers in Chemistry, Vol 9 (2021)
Chair 3D Co(II) phosphite frameworks have been prepared by the ionothermal method. It belongs to chiral space group P3221, and the whole framework can be topologically represented as a chiral 4-connected qtz net. It shows a multistep dielectric respo
Externí odkaz:
https://doaj.org/article/539780e973ba4c61a8353f429f2d5941
Autor:
H. Y. Sun, Z. W. Mao, T. W. Zhang, L. Han, T. T. Zhang, X. B. Cai, X. Guo, Y. F. Li, Y. P. Zang, W. Guo, J. H. Song, D. X. Ji, C. Y. Gu, C. Tang, Z. B. Gu, N. Wang, Y. Zhu, D. G. Schlom, Y. F. Nie, X. Q. Pan
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Precisely controlled growth of oxide interfaces at the atomic layer level is critical for device applications but quite challenging. Here Sun et al. show real time monitoring and control of the surface composition of epitaxial strontium titanate pero
Externí odkaz:
https://doaj.org/article/045e63116a5243cdb127fb64c0b246e9
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035230-035230-4 (2019)
Bronze phase titanium dioxide (TiO2-B) has an ideal open structure for applications in high-rate lithium-ion batteries, but high quality and water-free TiO2-B is difficult to synthesize since TiO2-B is energetically less stable compared to other TiO2
Externí odkaz:
https://doaj.org/article/00828004dadf4e76867c40c613e45634
Akademický článek
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Autor:
T. J. Anderson, H. Zhou, L. Xie, J. P. Podkaminer, J. J. Patzner, S. Ryu, X. Q. Pan, C. B. Eom
Publikováno v:
APL Materials, Vol 5, Iss 9, Pp 096110-096110-7 (2017)
The precise control of interfacial atomic arrangement in ABO3 perovskite heterostructures is paramount, particularly in cases where the subsequent electronic properties of the material exhibit geometrical preferences along polar crystallographic d
Externí odkaz:
https://doaj.org/article/1be3aeaf39c14bb1a912fcee7c8004ad
Autor:
C. X. Quintela, N. Campbell, D. F. Shao, J. Irwin, D. T. Harris, L. Xie, T. J. Anderson, N. Reiser, X. Q. Pan, E. Y. Tsymbal, M. S. Rzchowski, C. B. Eom
Publikováno v:
APL Materials, Vol 5, Iss 9, Pp 096103-096103-8 (2017)
The growth and study of materials showing novel topological states of matter is one of the frontiers in condensed matter physics. Among this class of materials, the nitride antiperovskite Cu3PdN has been proposed as a new three-dimensional Dirac semi
Externí odkaz:
https://doaj.org/article/4ec5b1a0b681485eb1e210e7faefe355
Publikováno v:
Zhonghua yi xue za zhi. 101(43)
Autor:
C. Adamo, L. Méchin, T. Heeg, M. Katz, S. Mercone, B. Guillet, S. Wu, J.-M. Routoure, J. Schubert, W. Zander, R. Misra, P. Schiffer, X. Q. Pan, D. G. Schlom
Publikováno v:
APL Materials, Vol 3, Iss 6, Pp 062504-062504-10 (2015)
We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and
Externí odkaz:
https://doaj.org/article/1c3c5f6bcefc4b87a4cd0bc1103ab4fd