Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.

Autor: Schmucker SW; University of Maryland, College Park, Maryland 20742, USA., Namboodiri PN; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Kashid R; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Wang X; University of Maryland, College Park, Maryland 20742, USA., Hu B; University of Maryland, College Park, Maryland 20742, USA., Wyrick JE; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Myers AF; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Schumacher JD; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Silver RM; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA., Stewart MD Jr; National Institute of Standards & Technology, Gaithersburg, Maryland 20899, USA.

Publikováno v: Physical review applied [Phys Rev Appl] 2019; Vol. 11.