Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Wun-Wei Lin"'
Autor:
Wun-Wei Lin, 林文瑋
105
In this study, we developed a novel technology, double transfer method, which peeled off the GaN-based light-emitting diodes (LEDs) from sapphire substrates on using a laser lift-off (LLO) process and then the GaN chips was transferred to fl
In this study, we developed a novel technology, double transfer method, which peeled off the GaN-based light-emitting diodes (LEDs) from sapphire substrates on using a laser lift-off (LLO) process and then the GaN chips was transferred to fl
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/5y4e98
Autor:
Wun-Wei Lin, 林文偉
105
Advanced driver assistance systems, or ADAS, are the foundation to help the driver in the driving process. Traffic sign detection and recognition is an important part of ADAS that can solve the concerns over road and transportation safety, A
Advanced driver assistance systems, or ADAS, are the foundation to help the driver in the driving process. Traffic sign detection and recognition is an important part of ADAS that can solve the concerns over road and transportation safety, A
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/42146219732846999068
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 10:187-190
Publikováno v:
Science of Advanced Materials. 6:1179-1183
Publikováno v:
Nanoscale Research Letters
This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer
Publikováno v:
SPIE Proceedings.
This work proposes a novel white light device consisted of a yttrium aluminum garnet (YAG) phosphor-doped zinc oxide (ZnO) (ZnO:YAG) thin film deposited on a indium tin oxide (ITO) glass substrate by ultrasonic spray pyrolysis. Characteristics of the
Publikováno v:
SPIE Proceedings.
This study presents a GaN thin film light-emitting diode (TF-LED) on an electroplated flexible copper substrate to improve thermal conduction effect of the LED. The optoelectronic characteristics and stress effect of the GaN TF-LEDs on the electropla
Publikováno v:
39th AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit.
Publikováno v:
The proceedings of the JSME annual meeting. :341-342
In this study we propose a novel laser‐assisted plasma thruster, in which plasma is induced through a laser beam irradiation onto a target, or a laser‐assisted process, and accelerated by electrical means instead of a direct acceleration only by