Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Wudyalew Wondmagegn"'
Autor:
Ron Pieper, Wudyalew Wondmagegn
Publikováno v:
2014 ASEE Annual Conference & Exposition Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::339040d33d7f26faee1544275c544227
https://doi.org/10.18260/1-2--20696
https://doi.org/10.18260/1-2--20696
Autor:
Wudyalew Wondmagegn, Husam N. Alshareef, Rafael Ramírez-Bon, B. E. Gnade, Manuel Quevedo-Lopez
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:5532-5538
The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f82647c5a9a71f1af99ef74786885fda
https://doi.org/10.1166/jnn.2011.3425
https://doi.org/10.1166/jnn.2011.3425
Autor:
Duo Mao, Wudyalew Wondmagegn, S. Gowrisanker, Ronald J. Pieper, H. J. Stiegler, I. Mejia-Silva, Manuel Quevedo-Lopez, Nikhil Satyala, Bruce E. Gnade, Husam N. Alshareef
Publikováno v:
Thin Solid Films. 519:4313-4318
The capacitance–voltage (C–V) characteristics of metal–insulator–semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numeric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7320b910d40d1f74e25be4011c0b26d8
https://doi.org/10.1016/j.tsf.2011.02.014
https://doi.org/10.1016/j.tsf.2011.02.014
Autor:
Wudyalew Wondmagegn, Eric Forsythe, Nikhil Satyala, Ronald J. Pieper, Bruce E. Gnade, H. J. Stiegler, Manuel Quevedo-Lopez
Publikováno v:
Thin Solid Films. 519:1943-1949
In this work a simulation based comparative study of organic field effect transistors designed using standard lithographic and printing designs is presented. The device simulations were performed using two-dimensional drift-diffusion equations with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cedd6c808af208043e7c2d7c4687b72
https://doi.org/10.1016/j.tsf.2010.10.020
https://doi.org/10.1016/j.tsf.2010.10.020
Autor:
Wudyalew Wondmagegn, S. Gowrisanker, H. J. Stiegler, Husam N. Alshareef, Manuel Quevedo-Lopez, Ronald J. Pieper, Nikhil Satyala, Bruce E. Gnade
Publikováno v:
Journal of Computational Electronics. 10:144-153
The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation takin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d725e6d0a98c67b1f4ba06d74ad1323d
https://doi.org/10.1007/s10825-010-0311-1
https://doi.org/10.1007/s10825-010-0311-1
Autor:
Wudyalew Wondmagegn, Ronald J. Pieper
Publikováno v:
Journal of Computational Electronics. 8:19-24
In this paper we present both finite element based and analytic model simulations of pentacene based organic thin film transistor. The finite element type simulation is done using Silvaco’s Atlas simulator and the analytic model simulation is perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecf58102b789969302159e4da5d2927b
https://doi.org/10.1007/s10825-009-0265-3
https://doi.org/10.1007/s10825-009-0265-3
Autor:
Wudyalew Wondmagegn, Israel Mejia, A. L. Salas-Villasenor, Ronald J. Pieper, A. L. Coogan, N. S. Pasupuleti, Manuel Quevedo-Lopez
Publikováno v:
45th Southeastern Symposium on System Theory.
Proposed and tested is a methodology for modeling polycrystalline thin film transistors which exhibit shifts in threshold voltage due to both grain boundaries and semiconductor thickness. The process involves a model, which uses in part standard-anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b89cc2683f1b98b33b491c9c87b57c82
https://doi.org/10.1109/ssst.2013.6524957
https://doi.org/10.1109/ssst.2013.6524957
Publikováno v:
Proceedings of the 2012 44th Southeastern Symposium on System Theory (SSST).
Comparison is made between established one dimensional linear and nonlinear memristor drift models with Hewlett Packard (HP) experimental data to test level of agreement. Models used in first phase of work are based on a sinusoidal applied voltage. L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f5ee9e93244212f408f84b93b8540e6
https://doi.org/10.1109/ssst.2012.6195143
https://doi.org/10.1109/ssst.2012.6195143
Autor:
H. J. Stiegler, Duo Mao, Bruce E. Gnade, Israel Mejia, Manuel Quevedo-Lopez, Wudyalew Wondmagegn, Ronald J. Pieper, Bikash Shrestha
Publikováno v:
Proceedings of the 2012 44th Southeastern Symposium on System Theory (SSST).
A simulation based comparative study of the polarization hysteresis of the ferroelectric capacitor using various ferroelectric models is presented. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80692e89acd22256b6d736933ba307e
https://doi.org/10.1109/ssst.2012.6195142
https://doi.org/10.1109/ssst.2012.6195142
Publikováno v:
2011 Proceedings of IEEE Southeastcon.
Based on the numerical model and the analytical expression developed in our previous work, the location of Fermi level in an organic semiconductor is determined using charge neutrality principle. As in our previous work, a pentacene based Organic Sch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b52b29fde04fca6abcc5fb7f03581b7
https://doi.org/10.1109/secon.2011.5752937
https://doi.org/10.1109/secon.2011.5752937