Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Wuchang Ding"'
Autor:
Peng Ding, Chen Chen, Muhammad Asif, Xi Wang, Jiebin Niu, Feng Yang, Wuchang Ding, Yongbo Su, Dahai Wang, Zhi Jin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 49-54 (2018)
This paper introduces a novel surface passivation using Si3N4 (20-nm)/Al2O3 (15-nm) stack layers in InAlAs/InGaAs InP-based high-electron-mobility transistors (HEMTs). The new technology gives rise to good dc and RF performances in InP-based HEMTs. N
Externí odkaz:
https://doaj.org/article/36e5a13e20294a1db3ab5d65b2542ba3
Autor:
Yanzhe Wang, Jianjun Ding, Ruize Feng, Shurui Cao, Fugui Zhou, Wuchang Ding, Yongbo Su, Zhi Jin
Publikováno v:
IEEE Transactions on Electron Devices. 70:941-946
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b537cc2c2dc64dacd963649ec95d278
https://doi.org/10.1109/ted.2023.3237996
https://doi.org/10.1109/ted.2023.3237996
Publikováno v:
IEICE Electronics Express. 20:20230114-20230114
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::758a34ddeff38e0a592144556755fe28
https://doi.org/10.1587/elex.20.20230114
https://doi.org/10.1587/elex.20.20230114
Autor:
Wuchang Ding, Yankui Li, Zhang Dayong, Dahai Wang, Shi Jingyuan, Zhi Jin, Yao Yao, Xinnan Huang, Songang Peng
Publikováno v:
RSC Advances. 10:3314-3318
So far, it is still difficult to construct composites with a gradient distribution of graphene for decreasing the reflection and increasing the absorption of electromagnetic energy. Here, we introduce an electrochemical method to efficiently prepare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fccfc953d4e98ff09233713783ee50b
https://doi.org/10.1039/c9ra04951g
https://doi.org/10.1039/c9ra04951g
Publikováno v:
Progress In Electromagnetics Research Letters. 84:7-14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4badc2646daf4ab431d256531a1539bf
https://doi.org/10.2528/pierl18111608
https://doi.org/10.2528/pierl18111608
Autor:
Fei Xiao, Xiao-Yu Liu, Haoran Wang, Wuchang Ding, Yong Zhang, Luwei Qi, Bo Wang, Jingtao Zhou, Zhi Jin
Publikováno v:
Electronics, Vol 10, Iss 1540, p 1540 (2021)
Electronics
Volume 10
Issue 13
Electronics
Volume 10
Issue 13
In this paper, a new method for the parameter extraction of Schottky barrier diode (SBD) is presented to eliminate the influence of parasitic parameters on the intrinsic capacitance-voltage (C-V) characteristics of the Schottky diodes at high frequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95de668e95399c2aaafd7ca8d37d07bc
https://www.mdpi.com/2079-9292/10/13/1540
https://www.mdpi.com/2079-9292/10/13/1540
Publikováno v:
Chinese Physics B. 31:068502
We present a convenient and practical electromagnetic (EM) assisted small-signal model extraction method for InP double-heterojunction bipolar transistors (DHBTs). Parasitic parameters of pad and electrode fingers are extracted by means of 3D EM simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc517eea99b664858e8f900fdd7327d
https://doi.org/10.1088/1674-1056/ac4f55
https://doi.org/10.1088/1674-1056/ac4f55
Publikováno v:
Chinese Physics B. 31:047303
With the widespread utilization of indium-phosphide-based high-electron-mobility transistors (InP HEMTs) in the millimeter-wave (mmW) band, the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent. We pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a743ec8f0aa30ae583e8e3c70fb3427
https://doi.org/10.1088/1674-1056/ac2b1d
https://doi.org/10.1088/1674-1056/ac2b1d
Autor:
Jun Hu, Zhi Jin, Wuchang Ding, Xiaojuan Chen, Shaojun Li, Muhammad Asif, Yongbo Su, Feng Yang, Xi Wang, Peng Ding
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8cc7be3eb78ffbac1af40b020b8fdb7
https://doi.org/10.1002/mmce.22143
https://doi.org/10.1002/mmce.22143
Autor:
Shi Jingyuan, Peng Ding, Zhi Jin, Wuchang Ding, Songang Peng, Feng Yang, Jing-Tao Zhou, Zhang Dayong, Jun Hu, Yongbo Su
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8868e7cb8f3af2e62d327a7608c50f8
https://doi.org/10.1002/mmce.22218
https://doi.org/10.1002/mmce.22218