Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Wu-Wei Tsai"'
Autor:
Robert Tseng, Sung-Tsun Wang, Tanveer Ahmed, Yi-Yu Pan, Shih-Chieh Chen, Che-Chi Shih, Wu-Wei Tsai, Hai-Ching Chen, Chi-Chung Kei, Tsung-Te Chou, Wen-Ching Hung, Jyh-Chen Chen, Yi-Hou Kuo, Chun-Liang Lin, Wei-Yen Woon, Szuya Sandy Liao, Der-Hsien Lien
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract The scaling of transistors with thinner channel thicknesses has led to a surge in research on two-dimensional (2D) and quasi-2D semiconductors. However, modulating the threshold voltage (V T) in ultrathin transistors is challenging, as tradi
Externí odkaz:
https://doaj.org/article/7552cc48a3f446cbbec8486b5245f7f4
Autor:
Wu-Wei Tsai, Jing-Yi Yan, Yu-Ju Hung, Ming-Yen Tsai, Wen-Jen Chiang, Po-Yung Liao, Tien-Yu Hsieh, Ting-Chang Chang, Bo-Wei Chen
Publikováno v:
Thin Solid Films. 572:33-38
The effects of oxygen ambiance on electrical characteristic degradation phenomena in a-InGaZnO thin film transistor with different biases and temperatures are investigated. It can be found that oxygen is substantially adsorbed on the backchannel and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0b8e3f746bbd0f3e4744b3be6b13345
https://doi.org/10.1016/j.tsf.2014.09.051
https://doi.org/10.1016/j.tsf.2014.09.051
Autor:
Chia-Sheng Lin, Yu-Te Chen, Jing-Yi Yan, Tien-Yu Hsieh, Wu-Wei Tsai, Ming-Yen Tsai, Ting-Chang Chang, Te-Chih Chen, Fu-Yen Jian, Wen-Jen Chiang
Publikováno v:
Surface and Coatings Technology. 231:478-481
This paper investigates the temperature and ambiance effects on various reliability issues for InGaZnO thin film transistors with an organic passivation layer. Hot-carrier stress and gate-bias stress are carried out under different environmental temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e5ad47ad58314328a0b5b691ba824e8
https://doi.org/10.1016/j.surfcoat.2012.10.030
https://doi.org/10.1016/j.surfcoat.2012.10.030
Autor:
Ann-Kuo Chu, Wen-Jen Chiang, Wu-Wei Tsai, Ming-Yen Tsai, Yu-Te Chen, Jing-Yi Yan, Tien-Yu Hsieh, Ting-Chang Chang, Te-Chih Chen
Publikováno v:
Thin Solid Films. 528:57-60
This letter studies the hot-carrier effect in indium–gallium–zinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation behaviors after hot-carrier stress in symmetric and asymmetric s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cb609a660dcf2c4a841c407330a83ca
https://doi.org/10.1016/j.tsf.2012.10.095
https://doi.org/10.1016/j.tsf.2012.10.095
Publikováno v:
IEEE Sensors Journal. 12:594-601
Non-invasive ammonia sensors are attractive alternatives for the diagnoses of a variety of chronic diseases such as liver cirrhosis and renal failure. A low cost pentacene-based organic thin film transistor (OTFT) fabricated by a novel and simple pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83d71bf3240840ad4e03f411b0061de0
https://doi.org/10.1109/jsen.2011.2121901
https://doi.org/10.1109/jsen.2011.2121901
Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
Publikováno v:
Advanced Materials. 23:4237-4242
IO N With a high mobility ( > 10 cm 2 V − 1 s − 1 ) and a low threshold voltage ( < 5 V) in low-temperature processes, transparent oxide semiconductor thin-fi lm transistors (TOS TFTs) have drawn considerable attention due to their applications o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d81bc2e1609737991d45bb82631017d
https://doi.org/10.1002/adma.201102530
https://doi.org/10.1002/adma.201102530
Publikováno v:
SID Symposium Digest of Technical Papers. 42:28-31
A high mobility ∼79 cm2/Vs amorphous In-Ga-Zn-O a-IGZO thin-film transistors TFTs with high output driving current has been demonstrated. We used a new structure with nano-dots doping on the channel of semiconductor devices. This device is proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9590a3381bb793a831abb5bd4437b8ad
https://doi.org/10.1889/1.3621299
https://doi.org/10.1889/1.3621299
Publikováno v:
ECS Transactions. 16:371-374
Pentacene thin-film transistors have great potential because of low cost, large-area circuits, and relatively high mobility. Due to active organic layers, OTFTs have suitable analyte response properties with high sensitivity in both gaseous(1) and aq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de22914b6a6bc07a71442194afe5ad0
https://doi.org/10.1149/1.2981140
https://doi.org/10.1149/1.2981140
Autor:
Hsin-Fei Meng, Yang-Kai Wu, Shih-Chieh Lin, Lon A. Wang, Yung Hsu, Jian-Hao Huang, Wu-Wei Tsai, Yung-Pin Chen, Hsiao-Wen Zan
Publikováno v:
IEEE Electron Device Letters. 34:313-315
In this letter, we demonstrate the first vertical-channel organic transistor using nanoimprint technology to produce a base electrode with high-density nanometer pores to well control the channel current vertically flowing through the pores. The aspe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6982c0f8f081c0977261c7d1605a8ca3
https://doi.org/10.1109/led.2012.2235402
https://doi.org/10.1109/led.2012.2235402
Autor:
Wen-Jen Chiang, Tien-Yu Hsieh, Yu Chun Chen, Hung Wei Li, Yi-Hsien Chen, Wu-Wei Tsai, Jing-Yi Yan, Wan-Fang Chung, Ting-Chang Chang
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:Q74-Q76
aDepartment of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan bAdvanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan cDepartment of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung Un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f37ab40027595d2f16ab011c09abd23
https://doi.org/10.1149/2.028304jss
https://doi.org/10.1149/2.028304jss