Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Wu-Song Huang"'
Autor:
Kevin O'Shea, Yoshihiro Yamamoto, Jin Wuk Sung, Libor Vyklicky, Pushkara Rao Varanasi, George G. Barclay, Irene Popova, James F. Cameron, Jason A. DeSISTO, Manabu Hidano, Johan Amara, David Valeri, Vaishali R. Vohra, Greg Prokopowicz, Adam Ware, Tomoki Kurihara, Kathleen M. O'Connell, Wu-Song Huang
Publikováno v:
Journal of Photopolymer Science and Technology. 22:17-24
A new family of materials has been developed to serve as a wet-developable bottom antireflective coating (D-BARC) for patterning levels that have a strong need to avoid dry-etch processes for BARC-open steps. Such include some implant levels, where d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c1c025ab30f31631633756506e17c2
https://doi.org/10.2494/photopolymer.22.17
https://doi.org/10.2494/photopolymer.22.17
Autor:
Robert D. Allen, Sean D. Burns, Dario L. Goldfarb, Ratnam Sooriyakumaran, Wu-Song Huang, Hiroshi Ito, Linda K. Sundberg, Mark Morris, Bill Hinsberg, Dirk Pfeiffer, Truong Hoa
Publikováno v:
Journal of Photopolymer Science and Technology. 18:425-429
Derivatives of Polyhedral Oligomeric Silsesquioxanes (POSS) and Oligosaccharides have been investigated as potential candidates for high resolution resists. POSS materials are cage compounds with defined mono-disperse molecular weights. Oligosacchari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba7129ac84c25700df1b217a453b7b0
https://doi.org/10.2494/photopolymer.18.425
https://doi.org/10.2494/photopolymer.18.425
Autor:
Hoa D. Truong, Wu-Song Huang, Mahmoud M. Khojastech, Hiroshi Ito, P. Rao Varanasi, Sean D. Burns, Mike Lercel, Dirk Pfeiffer
Publikováno v:
Journal of Photopolymer Science and Technology. 18:355-364
Positive 193 nm bilayer resists based on polysilsesquioxane are described. Fluoroalcohol is employed as an acid group instead of carboxylic acid because of its more attractive dissolution properties. Polymers were carefully analyzed by 19F, 13C, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b86ad827c55f736f6ddde9ecc76367fe
https://doi.org/10.2494/photopolymer.18.355
https://doi.org/10.2494/photopolymer.18.355
Autor:
Marie Angelopoulos, Yongqi Hu, W. H. Bruenger, C. Dzionk, Wu-Song Huang, Wei He, M. Torkler, Lhadi Merhari, Kenneth E. Gonsalves
Publikováno v:
Microelectronic Engineering. 63:391-403
A novel nanocomposite resist system was developed for sub-100 nm resolution e-beam lithography by dispersing surface-treated silica nanoparticles in a commercial ZEP520® resist. At 4.0 wt.% loading of silica nanoparticles, the system exhibited a muc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62817110fad53dc9e3d6e478f8ebed21
https://doi.org/10.1016/s0167-9317(02)00554-3
https://doi.org/10.1016/s0167-9317(02)00554-3
Autor:
Wu-Song Huang, Karen Petrillo, Arpan P. Mahorowala, Ranee Wai-Ling Kwong, Marie Angelopoulos, Wayne M. Moreau, C. R. Guarnieri, Arieh Aviram, David R. Medeiros, Christopher Magg
Publikováno v:
IBM Journal of Research and Development. 45:639-650
Resists for advanced mask-making with high-voltage electron-beam writing tools have undergone dramatic changes over the last three decades. From PMMA and the other early chain-scission resists for micron dimensions to the aqueous-base-developable, dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7051ee3c63640bf4829c87564e5044bd
https://doi.org/10.1147/rd.455.0639
https://doi.org/10.1147/rd.455.0639
Autor:
Chung-Hsi Wu, Sen Liu, Kangguo Cheng, Maud Vinet, Steven J. Holmes, Wu-Song Huang, Qing Liu, Kuang-Jung Chen, Scott Luning, Matt Colburn, Bruce B. Doris, Ranee Kwong, Laurent Grenouillet, Greg Breyta
Publikováno v:
SPIE Proceedings.
As an option to traditional positive or negative photoresist, hybrid resist has been developed to provide an alternative way to create small trench features, at the range of 20-60 nm, by generating with a single expose, with both positive and negativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c31bb8ef1330cfcf6841b35ffffaa7c0
https://doi.org/10.1117/12.2011515
https://doi.org/10.1117/12.2011515
Autor:
Krishna Gandi Sachdev, Harbans S. Sachdev, Ahmad D. Katnani, Ranee Wai-Ling Kwong, Wu-Song Huang
Publikováno v:
Microelectronic Engineering. 27:393-396
A new acid amplified negative tone resist system is described which utilizes the formation of tetrahydropyranyl ether group for the crosslinking reaction. In a three component system, the phenolic groups of the matrix resin add to the dihydropyranyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d40db93a3f18498977326bf2894aa402
https://doi.org/10.1016/0167-9317(94)00131-d
https://doi.org/10.1016/0167-9317(94)00131-d
Autor:
Kim Y. Lee, Wu-Song Huang, Mahmoud Khojasteh, R. Sooriyakumaran, Mark D. Denison, Dominic Changwon Yang, James F. Cameron, Roger F. Sinta, George W. Orsula, George Joseph Hefferon, Ahmad D. Katnani, Rao Bantu, Ranee Kwong, Jim Thackeray, Bill Brunsvold
Publikováno v:
Journal of Photopolymer Science and Technology. 8:525-534
An environmentally stable resist with high contrast, sensitivity and resolution is presented. Delay stability in excess of 24hr. has been achieved with insignificant change in linewidth. The resist also demonstrates extreme insensitivity to PEB, show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f223b2c3e7c7200a31d5c1626f1d800f
https://doi.org/10.2494/photopolymer.8.525
https://doi.org/10.2494/photopolymer.8.525
Autor:
Kuang-Jung Chen, Brian Osborn, Mark Slezak, Chung-Hsi Wu, Wu-Song Huang, Sen Liu, Ranee Kwong, Karen Huang, Nicolette Fender, Cherry Tang, Steven J. Holmes
Publikováno v:
SPIE Proceedings.
Negative photoresist materials for 248 nm (KrF excimer laser) implant applications are of interest to research and development recently, due to the ever-present demand to shrink lithographically-patterned device dimensions at an affordable cost. Chal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cef29d2c8cc7f561f3b79548c6dcb2f6
https://doi.org/10.1117/12.916158
https://doi.org/10.1117/12.916158
Autor:
Masaki Ohashi, Dario L. Goldfarb, Seiichiro Tachibana, Wai-kin Li, Kazumi Noda, Dah-Chung Owe-Yang, Wu-Song Huang, Takeshi Kinsho, Martin Glodde
Publikováno v:
SPIE Proceedings.
Process dependent focus leveling errors occur in photolithography when there is unpredicted reflectivity originating from multilayer structures on the fully integrated process wafer. The typical wavelength used in optical focus sensors is in the near
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13bd4729178f5ad7218e1b45de755b61
https://doi.org/10.1117/12.916240
https://doi.org/10.1117/12.916240