Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Wu Ying Ma"'
Autor:
Zu-Jun Wang, Yuan-Yuan Xue, Ning Tang, Gang Huang, Xu Nie, Shan-Kun Lai, Bao-Ping He, Wu-Ying Ma, Jiang-Kun Sheng, Shi-Long Gou
Publikováno v:
Sensors, Vol 24, Iss 5, p 1441 (2024)
The synergistic effects on the 0.18 µm PPD CISs induced by neutron displacement damage and gamma ionization damage are investigated. The typical characterizations of the CISs induced by the neutron displacement damage and gamma ionization damage are
Externí odkaz:
https://doaj.org/article/b0912d82848a4e56a90d1aeb16861822
Autor:
Mo-Han, Liu, Wu, Lu, Wu-Ying, Ma, Xin, Wang, Qi, Guo, Cheng-Fa, He, Ke, Jiang, Xiao-Long, Li, Ming-Zhu, Xiong
Publikováno v:
Chinese Physics C, 2016, 40(3): 36003-036003
The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestic were investigated under the dose rate of 800mGy(Si)/s and 1.3mGy(Si)/s with Co-60 gamma irradiation sour
Externí odkaz:
http://arxiv.org/abs/1504.00758
Autor:
Wu Ying Ma, Ouyang Xiaoping, Hongxia Guo, He Baoping, Gou shilong, zujun wang, yuanyuan xue, Li Pei
Publikováno v:
Microelectronics Journal. 135:105764
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59a4fcb3f416f49e48bb42318e2bbc86
https://doi.org/10.1016/j.mejo.2023.105764
https://doi.org/10.1016/j.mejo.2023.105764
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fa79e43b8c4deb0de1128c59504875d
https://doi.org/10.2139/ssrn.4239356
https://doi.org/10.2139/ssrn.4239356
Autor:
Wu Ying Ma, Liu linyue, Qin Haoming, Gao Ruilong, He Baoping, Gou shilong, He Yihui, Ouyang Xiaoping
Publikováno v:
Sensors. 23:2017
Perovskite CsPbBr3 semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for γ-radiation and X-ray detection at room temperature. However, the total dose ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cce4fcac22cce876428127935a137361
https://doi.org/10.3390/s23042017
https://doi.org/10.3390/s23042017
Autor:
Ling Lv, Dong Shijian, Lei Zhifeng, Ju An'an, Shaozhong Yue, Wu-Ying Ma, Hao Ruijing, Hong-Xia Guo, Zhong Xiangli, Xiaoping Ouyang, Xiao-Yu Pan
Publikováno v:
Acta Physica Sinica. 69:078501
In this paper, the total dose effect on AlGaN/GaN high-electron-mobility transistor (HEMT) devices after 60Co γ-ray irradiation with a total dose of 1 Mrad(Si) was investigated at different biases (VGS = –3 V, VDS = 0.5 V; VGS = –1.9 V, VDS = 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::682f4d4ffe43c9ba175addf84c640de7
https://doi.org/10.7498/aps.69.20191557
https://doi.org/10.7498/aps.69.20191557
Autor:
Xiaolong Li, Wang Xin, Mohan Liu, Ke Jiang, Qi Guo, Wu Lu, Wu-Ying Ma, Ming-Zhu Xun, Chengfa He
The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose rates of 800 mGy(Si)/s and 1.3 mGy(Si)/s with a Co-60 gamma irradiation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23563a5f99040537d6944505f0a5ec0b
Autor:
Xin Wang, Zhi-Kuan Wang, Qi Guo, Chengfa He, Xiaolong Li, Mohan Liu, Wu Lu, Wu-Ying Ma, Jin-Cheng Jia
Publikováno v:
Chinese Physics Letters. 33:086101
The radiation damage responses of fluorinated and non-fluorinated lateral PNP transistors are studied with specially designed gated-controlled lateral PNP transistors that allow for the extraction of the oxide trapped charge (N ot ) and interface tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d2bd5fc27d1753722d7be67ee88f07f
https://doi.org/10.1088/0256-307x/33/8/086101
https://doi.org/10.1088/0256-307x/33/8/086101
Autor:
WY (Ma Wu-Ying) Ma, Xin Wang, K (Jiang Ke) Jiang, Jiangwei Cui, Wei Lu, MH (Liu Mo-Han) Liu, Xiaojun Wu
Publikováno v:
Acta Physica Sinica. 63:226101
The metal-oxide-semiconductor field-effect transistor (MOSFET) and the parasitic bipolar transistor of domestic complementary metal oxide semiconductor (CMOS) process are irradiated with 60Coγ rays to investigate the failure mechanism of the mixed-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e15c4096cc750b1c571cef4e344e386c
https://doi.org/10.7498/aps.63.226101
https://doi.org/10.7498/aps.63.226101
Autor:
Bo Wang, Xuefeng Yu, Wu-Ying Ma, Qi Guo, Qiwen Zheng, Zhong-Chao Cong, Jiangwei Cui, Jing Sun, Hang Zhou, Li-Ya Ma
Publikováno v:
Acta Physica Sinica. 63:086101
In this paper, for the study of static random access memory (SRAM), the online-test and offline-test are carried out on the total dose radiation damages. The differences between the two kinds of test methods and physical mechanisms are investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::addc0d15fde0921c35d2c99c6a21044d
https://doi.org/10.7498/aps.63.086101
https://doi.org/10.7498/aps.63.086101