Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Wu Hsiao-Che"'
Publikováno v:
In Thin Solid Films 2010 518(18):5272-5277
Autor:
Li, Ming-Yen, Su, Mei-Yun, Chang, Te-Fu, Tsai, Bin-Siang, Tsai, Wen-Li, Wu, Hsiao-Che, Chuang, Poyo, Yang, Tsung-Hsun, Yen, Haw
Publikováno v:
In Microelectronic Engineering 2008 85(7):1502-1510
Publikováno v:
In Microelectronic Engineering 2008 85(1):126-130
Publikováno v:
Thin Solid Films. 518:5272-5277
Phase transformation and morphology evolution of ZrO2/Al2O3/ZrO2 laminate induced by the post-deposition NH3 annealing at 480 °C were studied and the effect on the electrical property of the TiN/ZrO2/Al2O3/ZrO2/TiN capacitor module was evaluated in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8eab422f4262bac0ce97a2c6873e9b5
https://doi.org/10.1016/j.tsf.2010.04.017
https://doi.org/10.1016/j.tsf.2010.04.017
Autor:
Tsai Bin-Siang, Te-Fu Chang, Wu Hsiao-Che, Ming-Yen Li, Haw Yen, Mei-Yun Su, Tsung-Hsun Yang, Tsai Wen-Li, Poyo Chuang
Publikováno v:
Microelectronic Engineering. 85:1502-1510
TiN/Al-0.5Cu/Ti film stacks deposited on SiO"2 substrate were studied by X-ray diffraction and electron microscopy to clarify the effects of the chamber long stay and post-deposition annealing on the morphology evolution. Experimental results indicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::351ac0b7149be45399cc07365c2097ff
https://doi.org/10.1016/j.mee.2008.02.003
https://doi.org/10.1016/j.mee.2008.02.003
Publikováno v:
Microelectronic Engineering. 85:126-130
The effect of the plasma operation pressure on the burn-in efficiency of a self-ionized-plasma (SIP) physical vapor deposition (PVD) system for growing TiN liner films was examined. The experiments in this study were designed to obtain the proper pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5adfb44fa1d834d5fbbf4a8ad57193b9
https://doi.org/10.1016/j.mee.2007.04.143
https://doi.org/10.1016/j.mee.2007.04.143
Publikováno v:
IEEE Electron Device Letters. 31:1014-1016
The combination of tetragonal ZrO2 (t-ZrO2) and amorphous Al2O3 was explored as the gate dielectric for Si-based MOS devices. Because of the absence of a ZrSiO4 and/or ZrSi interfacial layer, the thermally stable t-ZrO2/Al2O3/Si stack is more eligibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::576d1e4086c5b1713fee3242df4b59fa
https://doi.org/10.1109/led.2010.2053191
https://doi.org/10.1109/led.2010.2053191
Nitrided Tetragonal $\hbox{ZrO}_{2}$ as the Charge-Trapping Layer for Nonvolatile Memory Application
Publikováno v:
IEEE Electron Device Letters. 30:1290-1292
Employment of a tetragonal ZrO2 film as the charge-trapping layer for nonvolatile memory was investigated and the NH3 nitridation effect of the ZrO2 film on memory performance was also explored in this letter. The permittivity of the tetragonal ZrO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e8ad1c69e078fc0054fb90559bb956b
https://doi.org/10.1109/led.2009.2034115
https://doi.org/10.1109/led.2009.2034115
Publikováno v:
Applied Physics Letters. 93:033511
The metal-insulator-metal (MIM) capacitor for analog and rf applications has been developed with ZrO2∕Al2O3∕ZrO2 laminate as the dielectric. The high capacitance density of 21.54fF∕μm2 can be achieved due to the tetragonal ZrO2 which makes the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89e7635fa095cdea627fc24d93965f8b
https://doi.org/10.1063/1.2958238
https://doi.org/10.1063/1.2958238
Autor:
Jen-Lang Lue, Jen-Chung Chen, Cheng-Sung Huang, Shieh-Ming Chang, Yung-Yuan Chang, Ming-Yen Li, Wu Hsiao-Che
Publikováno v:
Journal of The Electrochemical Society. 154:H967
Aluminum oxide (Al 2 O 3 ) thin films have been prepared by the atomic layer deposition (ALD) using trimethylaluminum (TMA) and ozone (O 3 ) as precursors. The process pressure was varied from 200 mTorr to 1000 mTorr at 320°C, and its effect on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5377a45710ba5dd3e818886bbc3afd59
https://doi.org/10.1149/1.2778861
https://doi.org/10.1149/1.2778861