Výsledky vyhledávání - "Wu Ching Yuan"

Akademický článek

An Innovated 80V-100V High-Side Side-Isolated N-LDMOS Device

Autor: Yangi Shao Ming, Sheu Gene, Chien Ting Yao, Wu Chieh Chih, Lee Tzu Chieh, Wu Ching Yuan, Lai Chiu Chung

Publikováno v: MATEC Web of Conferences, Vol 201, p 02003 (2018)

We used TCAD Synopsys 3D tools and device simulators to propose an innovative device structure of 80V-100V high-side NLDMOS by using the silicon to silicon-di-oxide ratio with side trench. The high-side can also be developed by placing an NBL structu

Externí odkaz: https://doaj.org/article/9f6eab17689247679ed763d3dc034d34

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Akademický článek

Analysis of Kirk effect of an innovated high side Side-Isolated N-LDMOS device

Autor: Lai Ciou Jhong, Sheu Gene, Chien Ting Yao, Wu Chieh Chih, Lee Tzu Chieh, Deivasigamani Ravi, Wu Ching Yuan, Chandrashekhar, Yang Shao Ming

Publikováno v: MATEC Web of Conferences, Vol 44, p 02006 (2016)

An ESOA of LDMOS device is very critical for power device performance. Kirk effect is the one of the major problem which leads to poor ESOA performance. The cause of the problem mainly due to the high beta value of parasitic NPN transistor in the p-b

Externí odkaz: https://doaj.org/article/78f596564c034aca86e13fb723c9d57b

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