Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Wu Chieh Chih"'
Publikováno v:
MATEC Web of Conferences, Vol 201, p 02004 (2018)
High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of
Externí odkaz:
https://doaj.org/article/1bb89959515e4d4da26624e72b97f8c9
Autor:
Yangi Shao Ming, Sheu Gene, Chien Ting Yao, Wu Chieh Chih, Lee Tzu Chieh, Wu Ching Yuan, Lai Chiu Chung
Publikováno v:
MATEC Web of Conferences, Vol 201, p 02003 (2018)
We used TCAD Synopsys 3D tools and device simulators to propose an innovative device structure of 80V-100V high-side NLDMOS by using the silicon to silicon-di-oxide ratio with side trench. The high-side can also be developed by placing an NBL structu
Externí odkaz:
https://doaj.org/article/9f6eab17689247679ed763d3dc034d34
Autor:
Chandrashekhar, Sheu Gene, Yang Shao Mingo, Chien Ting Yao, Lin Yun Jung, Wu Chieh Chih, Lee Tzu Chieh
Publikováno v:
MATEC Web of Conferences, Vol 44, p 02007 (2016)
This paper demonstrates electrical degradation due to Hot Carrier Injection (HCI) stress for nLDMOS devices with different Large Angle Tilted Implantation Doping (LATID) techniques for p-body. It seems that optimization of the device with LATID angle
Externí odkaz:
https://doaj.org/article/8ec96c150e294f63a24e41b28a92bb42
Autor:
Lai Ciou Jhong, Sheu Gene, Chien Ting Yao, Wu Chieh Chih, Lee Tzu Chieh, Deivasigamani Ravi, Wu Ching Yuan, Chandrashekhar, Yang Shao Ming
Publikováno v:
MATEC Web of Conferences, Vol 44, p 02006 (2016)
An ESOA of LDMOS device is very critical for power device performance. Kirk effect is the one of the major problem which leads to poor ESOA performance. The cause of the problem mainly due to the high beta value of parasitic NPN transistor in the p-b
Externí odkaz:
https://doaj.org/article/78f596564c034aca86e13fb723c9d57b
Autor:
Wang, Cheng-Chi, Yangi, Shao Ming, Sheu, Gene, Chien, Ting Yao, Wu, Chieh Chih, Lee, Tzu Chieh, Wu, Ching Yuan, Lai, Chiu Chung
Publikováno v:
MATEC Web of Conferences; 8/21/2018, Vol. 201, pN.PAG-N.PAG, 4p
Autor:
Wang, Cheng-Chi, Yang, Shao-Ming, Sheu, Gene, Lee, Tzu Chieh, Chien, Ting Yao, Wu, Chieh Chih, Lin, Yun Jung
Publikováno v:
MATEC Web of Conferences; 8/21/2018, Vol. 201, pN.PAG-N.PAG, 3p