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A Review of Short Circuit Performance in 650 V Power Devices:SiC MOSFETs, Silicon Super-junction MOSFETs, SiC Cascode JFETs, Silicon MOSFETs and Silicon IGBTs

Autor: Bashar, Erfan, Agbo, Nereus, Wu, Ruizhu, Mendy, Simon, Jahdi, Saeed, Jennings, Michael, Withey, Andy, Evans, Sam, Davies, Gareth, Demitrova, Jana, Gonzalez, Jose Ortiz, Alatise, Olayiwola

Publikováno v: Bashar, E, Agbo, N, Wu, R, Mendy, S, Jahdi, S, Jennings, M, Withey, A, Evans, S, Davies, G, Demitrova, J, Gonzalez, J O & Alatise, O 2022, A Review of Short Circuit Performance in 650 V Power Devices : SiC MOSFETs, Silicon Super-junction MOSFETs, SiC Cascode JFETs, Silicon MOSFETs and Silicon IGBTs . in PCIM Europe 2022 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management . PCIM Europe Conference Proceedings, VDE Verlag, pp. 1167-1174, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022, Nuremberg, Germany, 10/05/22 . https://doi.org/10.30420/565822162

Using measurements, a comprehensive analysis is performed on the short circuit (SC) performance and robustness of 650V power devices including SiC MOSFETs, SiC Cascode JFETs, silicon Super-Junction, silicon IGBTs and silicon MOSFETs. The peak SC curr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2642::17508106287bc96f04d87a150ff59fe6
https://ieeexplore.ieee.org/document/9862185

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Threshold Voltage Drift and On-Resistance of SiC Symmetrical and Asymmetrical Double-trench MOSFETs Under Gate Bias Stress

Autor: Yang, Juefei, Jahdi, Saeed, Stark, Bernard, Mellor, Phil, Wu, Ruizhu, Ortiz-Gonzalez, Jose, Alatise, Olayiwola

Publikováno v: Yang, J, Jahdi, S, Stark, B, Mellor, P, Wu, R, Ortiz-Gonzalez, J & Alatise, O 2022, Threshold Voltage Drift and On-Resistance of SiC Symmetrical and Asymmetrical Double-trench MOSFETs Under Gate Bias Stress . in PCIM Europe 2022 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management . PCIM Europe Conference Proceedings, Institute of Electrical and Electronics Engineers (IEEE), pp. 1067-1072, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022, Nuremberg, Germany, 10/05/22 . https://doi.org/10.30420/565822148

In this paper, long-period positive and negative DC gate bias stressing is applied on the SiC symmetrical and asymmetrical double-trench MOSFETs for a wide range of temperatures in comparison with SiC planar MOSFETs. The magnitude of gate stress are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2642::5bb4ddfa7ae40a392eec20bf1857ca09
https://ieeexplore.ieee.org/document/9862171

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Akademický článek

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Electrothermal modelling and measurements of parallel-connected VTH mismatched SiC MOSFETs under inductive load switching

Autor: Mendy, Simon, Wu, Ruizhu, Ortiz Gonzalez, Jose Angel, Alatise, Olayiwola M.

In high current applications that use several parallel-connected SiC MOSFETs (e.g., automotive traction inverters), optimal current sharing is integral to overall system reliability. Threshold voltage (VTH) variation in SiC MOSFETs is a prevalent rel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::3d1b74137493de60663cbebdaaed4002
http://wrap.warwick.ac.uk/168188/1/WRAP-electrothermal-modelling-measurements-parallel-connected-VTH-mismatched-SiC-MOSFETs-under-inductive-load-switching-2022.pdf

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A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs

Autor: Alatise, Olayiwola, Bashar, E., Wu, Ruizhu, Agbo, Nereus, Mendy, Simon, Jahdi, Saeed, Gonzalez, Jose Ortiz, Mawby, Philip

Publikováno v: Alatise, O, Bashar, E, Wu, R, Agbo, N, Mendy, S, Jahdi, S, Gonzalez, J O & Mawby, P 2022, A Comparison of the Short Circuit Performance of 650 V SiC Planar MOSFETs, Trench MOSFETs and Cascode JFETs . in 11th International Conference on Power Electronics, Machines and Drives (PEMD 2022) . Institution of Engineering and Technology (IET), Hybrid Conference, Newcastle, UK, pp. 335-339, 11th International Conference on Power Electronics, Machines and Drives (PEMD 2022), Newcastle, United Kingdom, 21/06/22 . https://doi.org/10.1049/icp.2022.1071

Short circuits that occur in power converters put the power semiconductor devices under considerable electrothermal stress. The electrothermal stress causes a rise in junction temperature and ultimately device failure if the thermal limits of the dev

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21816bfb5b7e7c29ddd8ca995221ebc6
https://doi.org/10.1049/icp.2022.1071

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Impact of Linear-PWM and MPC controllers on the power device losses in a grid-tied two-level inverter

Autor: Gonzalez, Jose Ortiz, Perez-Estevez, Diego, Wu, Ruizhu, Doval-Gandoy, Jesus, Alatise, Olayiwola M.

Publikováno v: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe).

This paper presents a comparative analysis of the estimated power losses and device junction temperatures in a two-level grid-tied converter commanded by a linear current controller with a pulse-with-modulator (PWM) or a finite-control-set (FCS) mode

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8323d91b0949b3bb3bd8279cf786ca76
https://doi.org/10.23919/epe21ecceeurope50061.2021.9570585

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