Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Wsevolod V. Lundin"'
Autor:
Alexei V. Sakharov, Dmitri S. Arteev, Evgenii E. Zavarin, Andrey E. Nikolaev, Wsevolod V. Lundin, Nikita D. Prasolov, Maria A. Yagovkina, Andrey F. Tsatsulnikov, Sergey D. Fedotov, Evgenii M. Sokolov, Vladimir N. Statsenko
Publikováno v:
Materials, Vol 16, Iss 12, p 4265 (2023)
A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate m
Externí odkaz:
https://doaj.org/article/4d5c1f60bbad42e9893832605379ce86
Autor:
Dmitri S. Arteev, Alexei V. Sakharov, Wsevolod V. Lundin, Evgenii E. Zavarin, Andrey E. Nikolaev, Andrey F. Tsatsulnikov, Viktor M. Ustinov
Publikováno v:
Materials, Vol 15, Iss 24, p 8945 (2022)
The results of the study of the influence of Fe segregation into the unintentionally doped GaN channel layer in AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer layer on the electrical properties of two-dimensional electron gas are presented.
Externí odkaz:
https://doaj.org/article/18bb229a5b49456b9c924b601605ab01
Autor:
Amit Yadav, Ilya E. Titkov, Alexei V. Sakharov, Wsevolod V. Lundin, Andrey E. Nikolaev, Grigorii S. Sokolovskii, Andrey F. Tsatsulnikov, Edik U. Rafailov
Publikováno v:
Applied Sciences, Vol 8, Iss 7, p 1158 (2018)
We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This devi
Externí odkaz:
https://doaj.org/article/9e6b5d5d83474c57b625750330973a85
Autor:
Statsenko, Alexei V. Sakharov, Dmitri S. Arteev, Evgenii E. Zavarin, Andrey E. Nikolaev, Wsevolod V. Lundin, Nikita D. Prasolov, Maria A. Yagovkina, Andrey F. Tsatsulnikov, Sergey D. Fedotov, Evgenii M. Sokolov, Vladimir N.
Publikováno v:
Materials; Volume 16; Issue 12; Pages: 4265
A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate m
Autor:
Barettin, Daniele, Maur, Matthias Auf Der, Pecchia, Alessandro, Rodrigues, Walter, Tsatsulnikov, Andrei F, Sakharov, Alexei V, Wsevolod V Lundin, A E Nikolaev, Cherkashin, Nikolay, H¨Ytch, Martin J, Sergey, Yu, Karpov, Aldo, Carlo, Di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a48db01493a7a5357e2e208f4bf106a
Autor:
Dmitry A Zakheim, Wsevolod V Lundin, Alexey V Sakharov, Eugene E Zavarin, Pavel N Brunkov, Elena Y Lundina, Andrey F Tsatsulnikov, Sergey Yu Karpov
Publikováno v:
Semiconductor Science & Technology; Nov2018, Vol. 33 Issue 11, p1-1, 1p
Autor:
Daniele Barettin, Matthias Auf Der Maur, Aldo Di Carlo, Alessandro Pecchia, Andrei F Tsatsulnikov, Wsevolod V Lundin, Alexei V Sakharov, Andrei E Nikolaev, Maxim Korytov, Nikolay Cherkashin, Martin J Hÿtch, Sergey Yu Karpov
Publikováno v:
Nanotechnology; 7/7/2017, Vol. 28 Issue 27, p1-1, 1p
Autor:
Daniele Barettin, Matthias Auf der Maur, Aldo di Carlo, Alessandro Pecchia, Andrei F Tsatsulnikov, Alexei V Sakharov, Wsevolod V Lundin, Andrei E Nikolaev, Sergey O Usov, Nikolay Cherkashin, Martin J Hÿtch, Sergey Yu Karpov
Publikováno v:
Nanotechnology; 1/6/2017, Vol. 28 Issue 1, p1-1, 1p