Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Wsevolod Lundin"'
Autor:
Valery Davydov, Evgenii M. Roginskii, Yuri Kitaev, Alexander Smirnov, Ilya Eliseyev, Eugene Zavarin, Wsevolod Lundin, Dmitrii Nechaev, Valentin Jmerik, Mikhail Smirnov, Markus Pristovsek, Tatiana Shubina
Publikováno v:
Nanomaterials, Vol 11, Iss 9, p 2396 (2021)
We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp inter
Externí odkaz:
https://doaj.org/article/fbf84aae7a5347cc8142bb7dc29ba205
Autor:
Alexey Kolmakov, Emanuele Pelucchi, Michael Fay, LUCIA NASI, Maria Varela, Rafael García Roja, Dmitry Lobanov, Helge Weman, Ferdinand Hofer, Rafal Dunin-Borkowski, Markus Weyers, Joel Eymery, Gazi Aliev, Marina Gutiérrez Peinado, Hitoshi Tampo, Eric Tournié, Douglas Paul, Slawomir Kret, Federico Corni, Graziella Malandrino, Paul Midgley, PEDRO L. GALINDO, Cécile Hébert, Alexander Vasiliev, Adalberto Balzarotti, Ana Sanchez, Grzegorz Jurczak, Ondrej Klimo, Wsevolod Lundin, Matthew Weyland, Thomas Walther, Sandra Van Aert, Dmitri Nikolichev, Lothar Houben, Sascha Sadewasser, Viacheslav Golovanov, Adam Łaszcz, Ian Watson, Srinivasan Anand, Vittorio Morandi, Alessandra Catellani, Paul Munroe, Lydia Laffont, Ursel Bangert, Nicolas Grandjean, Jennifer Gray, Annika Lohstroh, Paul Sellin, Andreu Cabot, Jie Zhang, Ernesto Placidi, Evgenii Zavarin, Jacek Ratajczak, Richard Beanland, Mohammed Benaissa, Dmitri GOLBERG, Michael Stöger-Pollach, Paul Harrison, Monica Bollani, Alexey Novikov, Gilles Patriarche, Vadim Sirotkin, Meilin Liu, Miriam Herrera Collado, Sergey Rubanov, Adam Wojcik, ANNA SGARLATA, Arnold Den Dekker, Thomas Dekorsy, André Vantomme, George Cirlin, Jerzy KĄTCKI, Daniel Hill, Masanori Mitome, Xavier Aymerich, Sergio I. Molina, Paweł Dłużewski, Roberta grazia Toro, Souren Grigorian, Klaus Leifer, Mark Aindow, Jean-Michel Chauveau, Giuseppe Nicotra, Martin Albrecht, Corrado Bongiorno, Jiří Limpouch, Hele Savin
Publikováno v:
A. G. Cullis, P. A. Midgley. CRC Press, 4 p., 2018, 9781351074636. ⟨10.1201/9781351074636⟩
International audience; In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::301d0be2daf17c1032417a5026374bfe
https://hal.science/hal-03555261
https://hal.science/hal-03555261
Publikováno v:
Semiconductors. 39:1304
Structures with InGaN/GaN quantum dots have been studied using photocurrent spectroscopy. The dynamic range of measurements is found to amount to four orders of magnitude under preservation of the signal-to-noise ratio at a level higher than ten. Wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a14a533fc0687aeba228d031c14bcf3
https://doi.org/10.1134/1.2128455
https://doi.org/10.1134/1.2128455
Publikováno v:
Semiconductors. 39:249
The electrical and optical properties of light-emitting devices with an active region containing several layers of InGaN/GaN quantum dots (QDs) separated by GaN spacers are studied. It is shown that the overgrowth of the QD layer with an InGaN layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b31967d94efe848633fbae6707451b
https://doi.org/10.1134/1.1864208
https://doi.org/10.1134/1.1864208
Publikováno v:
Semiconductors. 39:467
The carrier statistics in LED structures with ultrathin multilayer InGaN insertions in a GaN matrix was studied. The optical data obtained indicate that an array of quantum dots (QDs) is formed in these structures. The QDs are scattered in size, whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6499d98de91d4eab5d9fce75e83d0d76
https://doi.org/10.1134/1.1900264
https://doi.org/10.1134/1.1900264
Publikováno v:
Semiconductors. 39:100
The behavior of threading dislocations in AlGaN and InGaN layers incorporated into GaN-based heterostructures is studied. It is shown that InGaN layers with an intermediate composition can be used as the most effective dislocation filters. Estimation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85fe4b41298cfca459ecbee9f152e05a
https://doi.org/10.1134/1.1852655
https://doi.org/10.1134/1.1852655
Autor:
Sizov, D. S., Sizov, V. S., Zavarin, E. E., Wsevolod Lundin, Fomin, A. V., Tsatsul Nikov, A. F., Ledentsov, N. N.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2da58780d1d61a4392bb003c96072da0
http://www.scopus.com/inward/record.url?eid=2-s2.0-24044485935&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-24044485935&partnerID=MN8TOARS
Autor:
Sizov, D. S., Sizov, V. S., Wsevolod Lundin, Tsatsul Nikov, A. F., Zavarin, E. E., Ledentsov, N. N.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5195af329db7d69bb06a62e54fb31041
http://www.scopus.com/inward/record.url?eid=2-s2.0-27744541225&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-27744541225&partnerID=MN8TOARS