Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Wrona, Jerzy"'
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs fabricated on a s
Externí odkaz:
http://arxiv.org/abs/1903.08949
Autor:
Wang, Mengxing, Cai, Wenlong, Cao, Kaihua, Zhou, Jiaqi, Wrona, Jerzy, Peng, Shouzhong, Yang, Huaiwen, Wei, Jiaqi, Kang, Wang, Zhang, Youguang, Langer, Jürgen, Ocker, Berthold, Fert, Albert, Zhao, Weisheng
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge
Externí odkaz:
http://arxiv.org/abs/1708.04111
Autor:
Skowroński, Witold, Czapkiewicz, Maiej, Ziętek, Sławomir, Chęciński, Jakub, Frankowski, Marek, Rzeszut, Piotr, Wrona, Jerzy
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling magnetoresistance (TMR) ra
Externí odkaz:
http://arxiv.org/abs/1701.06411
Autor:
Cecot, Monika, Karwacki, Lukasz, Skowronski, Witold, Kanak, Jaroslaw, Wrona, Jerzy, Zywczak, Antoni, Yao, Lide, van Dijken, Sebastiaan, Barnas, Jozef, Stobiecki, Tomasz
We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic structures of the Ta layer and Ta/CoFeB interface are examined in detail u
Externí odkaz:
http://arxiv.org/abs/1612.03020
Autor:
Frankowski, Marek, Żywczak, Antoni, Czapkiewicz, Maciej, Ziętek, Sławomir, Kanak, Jarosław, Banasik, Monika, Powroźnik, Wiesław, Skowroński, Witold, Chęciński, Jakub, Wrona, Jerzy, Głowiński, Hubert, Dubowik, Janusz, Ansermet, Jean-Philippe, Stobiecki, Tomasz
We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and thermal stability. We investigate devices consisting of buffer/FeCoB/
Externí odkaz:
http://arxiv.org/abs/1502.06418
Autor:
Ziętek, Sławomir, Ogrodnik, Piotr, Frankowski, Marek, Chęciński, Jakub, Wiśniowski, Piotr, Skowroński, Witold, Wrona, Jerzy, Stobiecki, Tomasz, Żywczak, Antoni, Barnaś, Józef
We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a no
Externí odkaz:
http://arxiv.org/abs/1410.6672
Autor:
Skowroński, Witold, Frankowski, Marek, Wrona, Jerzy, Stobiecki, Tomasz, Ogrodnik, Piotr, Barnaś, Józef
We report on a voltage tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall
Externí odkaz:
http://arxiv.org/abs/1406.6935
Autor:
Skowroński, Witold, Ogrodnik, Piotr, Wrona, Jerzy, Stobiecki, Tomasz, Świrkowicz, Renata, Barnaś, Józef, Reiss, Günter, van Dijken, Sebastiaan
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth switching bet
Externí odkaz:
http://arxiv.org/abs/1305.2711
Autor:
Skowroński, Witold, Czapkiewicz, Maciej, Frankowski, Marek, Wrona, Jerzy, Stobiecki, Tomasz, Reiss, Günter, Chalapat, Khattiya, Paraoanu, Gheorghe S., van Dijken, Sebastiaan
Publikováno v:
Physical Review B 87, 094419 (2013)
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of an RF cur
Externí odkaz:
http://arxiv.org/abs/1301.7186
We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage of the fe
Externí odkaz:
http://arxiv.org/abs/1110.0295