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Autor:
Carvalho, Patricia Almeida, Thørgesen, Annett, Ma, Quanbao, Wright, Daniel Nielsen, Diplas, Spyros, Galeckas, Augustinas, Azarov, Alexander, Jokubavicius, Valdas, Sun, Jianwu, Syväjärvi, Mikael, Svensson, Bengt Gunnar, Løvvik, Ole Martin
Publikováno v:
SciPost Phys. 5, 021 (2018)
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration
Externí odkaz:
http://arxiv.org/abs/1804.06532