Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Wouter Devulder"'
Autor:
Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Kar
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a196d259b1d9bc457b9b5dedba2632a4
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830199
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830199
Autor:
Jonas Keukelier, Ludovic Goux, Thomas Nuytten, Sergiu Clima, Stefanie Sergeant, Karl Opsomer, Wouter Devulder, Gouri Sankar Kar, Christophe Detavernier
Publikováno v:
JOURNAL OF MATERIALS CHEMISTRY C
Raman spectroscopy measurements are performed on sputtered GexSe1-x thin films to identify bond presence. A large amount of homopolar bonds are found, including Ge-Ge bonds that can be attributed to Ge clustering. A time-resolved approach to Raman sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6f958578c6d8dfd13ec649fb0cb7663
https://doi.org/10.1039/d0tc04086j
https://doi.org/10.1039/d0tc04086j
Autor:
Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2200417
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e9d6f4c6585a49ec4b101f7c04c5cd
https://doi.org/10.1002/pssr.202200417
https://doi.org/10.1002/pssr.202200417
Autor:
Wouter Devulder, Daniele Garbin, Sergiu Clima, Gabriele Luca Donadio, Andrea Fantini, Bogdan Govoreanu, Christophe Detavernier, Larry Chen, Michael Miller, Ludovic Goux, Sven Van Elshocht, Johan Swerts, Romain Delhougne, Gouri Sankar Kar
Publikováno v:
Thin Solid Films. 753:139278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6490f8fd01d7d71358871573d41af5c5
https://doi.org/10.1016/j.tsf.2022.139278
https://doi.org/10.1016/j.tsf.2022.139278
Autor:
Ludovic Goux, R. Delhougne, Gouri Sankar Kar, Sven Van Elshocht, Christophe Detavernier, Wouter Devulder, Matty Caymax, Jan Willem Maes, Gabriel Khalil El Hajjam, Jean-Marc Girard, Karl Opsomer, Ali Haider, Johan Swerts, Shaoren Deng, Annelies Delabie, Michael Eugene Givens
Publikováno v:
MATERIALS ADVANCES
The ovonic threshold switch (OTS) selector based on the voltage snapback of amorphous chalcogenides has received tremendous attention as it provides several desirable characteristics such as bidirectional switching, a controllable threshold voltage,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e62b93c2d6d50a27c2fe78d325d76509
https://hdl.handle.net/1854/LU-8706073
https://hdl.handle.net/1854/LU-8706073
Autor:
Jonas Keukelier, Sergiu Clima, Ludovic Goux, Karl Opsomer, Wouter Devulder, Christophe Detavernier, Gouri Sankar Kar
Publikováno v:
JOURNAL OF APPLIED PHYSICS
In order to make 3D crossbar memory architectures viable, selector elements with highly non-linear current-voltage characteristics are required. Ovonic Threshold Switching (OTS) is a highly non-linear phenomenon observed in amorphous chalcogenides, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc02c7033a7f0cade983f70e5adaca8c
https://hdl.handle.net/1854/LU-8737018
https://hdl.handle.net/1854/LU-8737018
Autor:
Taras Ravsher, Robin Degraeve, Daniele Garbin, Andrea Fantini, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar
ispartof: 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) ispartof: IEEE International Electron Devices Meeting (IEDM) location:CA, San Francisco date:11 Dec - 16 Dec 2021 status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10f4df6932453069195f409c5e305d94
https://lirias.kuleuven.be/handle/20.500.12942/700465
https://lirias.kuleuven.be/handle/20.500.12942/700465
Autor:
W. G. Kim, Daniele Garbin, D. Cellier, Robin Degraeve, Sergiu Clima, S. Kabuyanagi, Mahendra Pakala, A. Cockburn, G. L. Donadio, Andrea Fantini, Wouter Devulder, Gouri Sankar Kar, M. Suzuki, Ludovic Goux, Romain Delhougne
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
Switching mechanism and its controllability in Ovonic Threshold Switching (OTS) devices are systematically investigated by using Si-Ge-As-Se quaternary system known as promising OTS materials. We newly demonstrate that selector device performance is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cdcb8bfe4858a488ad7b70590df0dee
https://doi.org/10.1109/vlsitechnology18217.2020.9265011
https://doi.org/10.1109/vlsitechnology18217.2020.9265011
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::4515d55eb5824187e115eb1889b2ae68
Autor:
Wouter Devulder, Romain Delhougne, W. G. Kim, Andrea Fantini, Gouri Sankar Kar, Sergiu Clima, Christophe Detavernier, A. Cockburn, Mahendra Pakala, Robin Degraeve, Ludovic Goux, Karl Opsomer, G. L. Donadio, D. Cellier, Daniele Garbin
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this work we explore the composition space of the Ovonic Threshold Switch (OTS) selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co-sputtering capabilities enabled the tuning of the As/Te ratio, Ge and Si conte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::310b449b2b421dd6dc7c2ce077a73ade
https://doi.org/10.1109/iedm19573.2019.8993547
https://doi.org/10.1109/iedm19573.2019.8993547