Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Wouter D. Koek"'
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII
Due to its potential for high resolution and three-dimensional imaging, soft X-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft X-ray ptychography for various n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9dbd97f7d7a5087c5bd0c641b90dd8ee
https://doi.org/10.1117/12.2306488
https://doi.org/10.1117/12.2306488
Autor:
Erwin John Van Zwet, Teun C. van den Dool, Jeroen A. Smeltink, David Nijkerk, Wouter D. Koek, Gregor van Baars
Publikováno v:
High-Power Laser Materials Processing: Applications, Diagnostics, and Systems VI.
TNO is developing a High Power Adaptive Mirror (HPAM) to be used in the CO2 laser beam path of an Extreme Ultra- Violet (EUV) light source for next-generation lithography. In this paper we report on a developed methodology, and the necessary simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2c5739e9d82e775a3a9c4ed83a292db
https://doi.org/10.1117/12.2249739
https://doi.org/10.1117/12.2249739
Publikováno v:
2017 IEEE International Ultrasonics Symposium, IUS 2017. 6 September 2017 through 9 September 2017
With the ongoing drive to integrate more functionality and processing power on the same semiconductor area, the device structures have become 3D. Such structures, like FinFETs and their successors Gate-All-Around (GAA) nanowire FETs, bring on new cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9965e1fffeb75639c05e79b7d1e65fc3
http://resolver.tudelft.nl/uuid:e93cf359-48c0-4ece-b0b6-1336b3d1f6c6
http://resolver.tudelft.nl/uuid:e93cf359-48c0-4ece-b0b6-1336b3d1f6c6
Publikováno v:
SPIE Proceedings.
Traditionally, (dark field) imaging based, particle detection systems rely on identifying a particle based on its irradiance. It can be shown that for a very smooth wafer with 0.1 nm surface roughness (rms) this approach results in a particle detecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91696eb1164de6f78ec0c6de040a3772
https://doi.org/10.1117/12.2239885
https://doi.org/10.1117/12.2239885