Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Woszczyna, Mirosław"'
Autor:
Matei, Dan G., Weber, Nils-Eike, Kurasch, Simon, Wundrack, Stefan, Woszczyna, Miroslaw, Grothe, Miriam, Weimann, Thomas, Ahlers, Franz, Stosch, Rainer, Kaiser, Ute, Turchanin, Andrey
Publikováno v:
Adv. Mater. 25, 4146-4151 (2013)
We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional soli
Externí odkaz:
http://arxiv.org/abs/1406.1962
Autor:
Woszczyna, Miroslaw, Winter, Andreas, Grothe, Miriam, Willunat, Annika, Wundrack, Stefan, Stosch, Rainer, Weimann, Thomas, Ahlers, Franz, Turchanin, Andrey
Publikováno v:
Advanced Materials 28 (2014) 4831-4837
We present a route to non-destructive functionalization of graphene via assembly of vertical all-carbon van der Waals heterostructures. To this end, we employ singlelayer graphene (SLG) sheets grown by low-pressure methane CVD on Cu foils and large-a
Externí odkaz:
http://arxiv.org/abs/1406.1966
Autor:
Woszczyna, Mirosław, Friedemann, Miriam, Götz, Martin, Pesel, Eckart, Pierz, Klaus, Weimann, Thomas, Ahlers, Franz J.
Publikováno v:
Applied Physics Letters 100, 164106 (2012)
We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, rev
Externí odkaz:
http://arxiv.org/abs/1203.1798
Autor:
Woszczyna, Mirosław, Friedemann, Miriam, Dziomba, Thorsten, Weimann, Thomas, Ahlers, Franz J.
Publikováno v:
Appl. Phys. Lett. 99, 022112 (2011)
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer me
Externí odkaz:
http://arxiv.org/abs/1105.0838
Publikováno v:
Journal of Applied Physics, 110, 043712 (2011)
We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs multilayer, de
Externí odkaz:
http://arxiv.org/abs/1103.3367
Autor:
Sikora, Andrzej, Woszczyna, Mirosław, Friedemann, Miriam, Ahlers, Franz Josef, Kalbac, Martin
Publikováno v:
In Micron 2012 43(2):479-486
Autor:
Woszczyna, MirosŁaw, Zawierucha, PaweŁ, Masalska, Agata, Jóźwiak, Grzegorz, Staryga, Elżbieta, Gotszalk, Teodor
Publikováno v:
In Ultramicroscopy 2010 110(7):877-880
Publikováno v:
In Vacuum 2008 82(10):982-987
Autor:
Janusz, Maria, Woszczyna, Mirosław, Lisowski, Marek, Kubis, Adriana, Macała, Józefa, Gotszalk, Teodor, Lisowski, Józef
Publikováno v:
In FEBS Letters 5 January 2009 583(1):190-196
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.