Zobrazeno 1 - 10
of 297
pro vyhledávání: '"Wosinski, T."'
Autor:
Gluba, L., Yastrubchak, O., Domagala, J. Z., Jakiela, R., Andrearczyk, T., Żuk, J., Wosinski, T., Sadowski, J., Sawicki, M.
Publikováno v:
Phys. Rev. B 97, 115201 (2018)
The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs already for
Externí odkaz:
http://arxiv.org/abs/1708.06435
Autor:
Levchenko, K., Andrearczyk, T., Domagala, J. Z., Sadowski, J., Kowalczyk, L., Szot, M., Kuna, R., Figielski, T., Wosinski, T.
Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie tempe
Externí odkaz:
http://arxiv.org/abs/1607.02569
Autor:
Levchenko, K., Andrearczyk, T., Domagala, J. Z., Sadowski, J., Kowalczyk, L., Szot, M., Figielski, T., Wosinski, T.
Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resoluti
Externí odkaz:
http://arxiv.org/abs/1506.08718
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth anne
Externí odkaz:
http://arxiv.org/abs/1406.4992
Autor:
Gluba, L., Yastrubchak, O., Sek, G., Rudno-Rudziński, W., Sadowski, J., Kulik, M., Rzodkiewicz, W., Rawski, M., Andrearczyk, T., Wosinski, T., Żuk, J.
The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the valence ban
Externí odkaz:
http://arxiv.org/abs/1312.3930
Autor:
Yastrubchak, O., Andrearczyk, T., Domagala, J. Z., Sadowski, J., Gluba, L., Zuk, J., Wosinski, T
The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy
Externí odkaz:
http://arxiv.org/abs/1305.4175
Autor:
Yastrubchak, O., Sadowski, J., Krzyzanowska, H., Gluba, L., Zuk, J., Domagala, J. Z., Andrearczyk, T., Wosinski, T.
Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and
Externí odkaz:
http://arxiv.org/abs/1305.4056
Autor:
Yastrubchak, O., Zuk, J., Krzyzanowska, H., Domagala, J. Z., Andrearczyk, T., Sadowski, J., Wosinski, T.
Fundamental optical properties of thin films of (Ga,Mn)As diluted ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photorefle
Externí odkaz:
http://arxiv.org/abs/1012.4760
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610535
Autor:
Figielski, T., Wosinski, T., Pelya, O., Sadowski, J., Morawski, A., Makosa, A., Dobrowolski, W., Szymczak, R., Wrobel, J.
We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak localization (WL) effects at the lowest temperatures. In constricted
Externí odkaz:
http://arxiv.org/abs/cond-mat/0409224