Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Woorim Shin"'
Autor:
Abhishek Agrawal, Amy Whitcombe, Woorim Shin, Ritesh Bhat, Somnath Kundu, Peter Sagazio, Hariprasad Chandrakumar, Thomas Brown, Brent Carlton, Christopher Hull, Steven Callender, Stefano Pellerano
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Autor:
Peter Sagazio, Christopher D. Hull, Oner Orhan, Steven Callender, Woorim Shin, Stefano Pellerano
Publikováno v:
IEEE Communications Magazine. 56:186-192
As 5G takes advantage of the vast amount of available spectrum in the mmWave bands, system and circuit designers face new challenges to create efficient, high-performance phased array transceivers. This article covers scaled CMOS circuit and system t
Publikováno v:
CICC
Intel's 22FFL is the comprehensive FinFET technology offering the best-in-class RF transistors achieving $f_{t}$ and $f_{max}$ above 300GHz and 450GHz, respectively. The addition of a high-power RF device (HyPowerFF) and enhanced mmWave BEOL support
Autor:
Mark Chakravorti, Arnaud Lucres Amadjikpe, Woorim Shin, Stefano Pellerano, Peter Sagazio, William J. Lambert, Steven Callender, Abhishek Agrawal, Christopher D. Hull, Divya Shree Vemparala, Yanjie Wang, Somnath Kundu, Satoshi Suzuki, Farhana Sheikh, Brent Carlton, Robert Flory
Publikováno v:
ISSCC
Fifth-generation cellular communication standards (5G) target Gb/s data-rates, pushing the industry beyond the sub-6GHz bands. Tens of GHz of spectrum are available in the frequency bands from 30 to 300GHz. To maintain acceptable link budgets with su
Publikováno v:
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper presents E-band (71–76 GHz) LNA design in 22nm CMOS FinFET technology. Stacked topology with DC current re-use for 2-stage cascaded LNA results in power efficient design with high performance. Measurement shows peak gain of 20 dB and min
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:2041-2055
This paper presents a W-band wafer-scale phased- array transmitter with high-efficiency on-chip antennas. The 4 × 4 array is based on an RF beamforming architecture with an equiphase distribution network and phased shifters placed on every element.
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:3263-3271
This paper presents an in-depth analysis of an SiGe BiCMOS on-off keying (OOK) receiver composed of a low-noise SiGe amplifier and an OOK detector. The analysis indicates that the bias circuit and bias current have a substantial impact on the receive
Autor:
Ozgur Inac, Ozan Dogan Gurbuz, Bon-Hyun Ku, Sang Young Kim, Yu-Chin Ou, Tumay Kanar, Gabriel M. Rebeiz, Fatih Golcuk, Woorim Shin
Publikováno v:
2015 IEEE MTT-S International Microwave Symposium.
This talk will present our latest work on silicon RFICs for phased-array applications with emphasis on very large chips with built-in-self-test capabilities for 5G systems. SiGe is shown to be ideal for mm-wave applications due to its high temperatur
Autor:
Faith Golcuk, Woorim Shin, Ozgur Inac, Samet Zihir, Ozan Dogan Gurbuz, Gabriel M. Rebeiz, Jennifer Edwards, Tumay Kanar
Publikováno v:
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This invited talk will present a summary of the millimeter-wave wafer-scale phased array work at UCSD. This concept can drastically reduce the cost of millimeter- wave phased arrays by combining the RFIC blocks, antennas, power distribution and summi
Publikováno v:
2014 IEEE Radio Frequency Integrated Circuits Symposium.
This paper presents a 155 GHz 20 Gbit/s quadrature phase-shift-keying (QPSK) transceiver front-end with modulator, demodulator, LO chain and an option for external LO feed. The transceiver can achieve a bit error rate (BER)