Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Woopyo Jeong"'
Autor:
Bvunarvul Kim, Seungpil Lee, Beomseok Hah, Kanawoo Park, Yongsoon Park, Kangwook Jo, Yujong Noh, Hyeoncheon Seol, Hyunsoo Lee, Jaehyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonauk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulhee Koo, Yeonjoo Choi, Suyoung Choi, Sechun Park, Dongkyu Youn, Junyoun Lim, Wonsun Park, Hwang Hur, Kichang Kwean, Hongsok Choi, Woopyo Jeong, Sungyong Chung, Jungdal Choi, Seonyong Cha
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Autor:
Wanik Cho, Jongseok Jung, Jongwoo Kim, Junghoon Ham, Sangkyu Lee, Yujong Noh, Dauni Kim, Wanseob Lee, Kayoung Cho, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Eunwoo Jo, Hanna Cho, Jong-Seok Kim, Chankeun Kwon, Cheolioona Park, Hveonsu Nam, Haeun Won, Taeho Kim, Kyeonghwan Park, Sanghoon Oh, Jinhyun Ban, Junyoung Park, Jaehyeon Shin, Taisik Shin, Junseo Jang, Jiseong Mun, Jehyun Choi, Hyunseung Choi, Suna-Wook Choi, Wonsun Park, Dongkvu Yoon, Minsu Kim, Junvoun Lim, Chiwook An, Hyunyoung Shirr, Haesoon Oh, Haechan Park, Sungbo Shim, Hwang Huh, Honasok Choi, Seungpil Lee, Jaesuna Sim, Kichana Gwon, Jumsoo Kim, Woopyo Jeong, Jungdal Choi, Kyo-Won Jin
Publikováno v:
2022 IEEE International Solid- State Circuits Conference (ISSCC).
Autor:
Kangwoo Park, Kwanho Kim, Cheoljoong Park, Kayoung Cho, Kun-Ok Ahn, Chankeun Kwon, Jong Woo Kim, Hyun Chul Lee, Hyunseok Song, Heonki Kirr, Sunghwa Ok, Yongsoon Park, Juhyeong Lee, Sooyeol Chai, Hyeonsu Nam, Heejoo Lee, Tae-Sung Jung, Sang Kyu Lee, Jayoon Goo, Hwang Huh, Woopyo Jeong, Kangwook Jo, Geonu Kim, Yujin Yang, Jangwon Park, Chanhui Jeong, Yujong Noh, Hanna Cho, Wanik Cho, Jinhaeng Lee
Publikováno v:
ISSCC
Ever since a 3b/cell (TLC) NAND Flash memory became the mainstream in nonvolatile memory market, a new demand for a 4b/cell (QLC) NAND flash memory has been emerging for low-cost applications. However, QLC has inherently much longer page program time
Autor:
HyunWook Park, Doohyun Kim, Jae Doeg Yu, Hyun-Jun Yoon, Jonghoon Park, Kye-Hyun Kyung, Hyung-Gon Kim, Jinbae Bang, Chulbum Kim, Jeong-Don Ihm, Yong-Ha Park, Seung-Bum Kim, Woopyo Jeong, Hwajun Jang, Ji-Young Lee, Il Han Park, Nahyun Kim, Pansuk Kwak, Yang-Lo Ahn, Ki-Tae Park, Jong-Hoon Lee, Sanggi Hong, Hyun-Jin Kim, Park Jiyoon, Dae Seok Byeon, Jin-Yub Lee, Young-don Choi, Moosung Kim, Nayoung Choi, Seung-Hwan Song
Publikováno v:
IEEE Journal of Solid-State Circuits. 53:124-133
A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly examining the challenges that occur to a stack, several technologies are suggested to resolve the issues. For performance enhancement, a novel program method hid
Autor:
Jaedoeg Yu, Kyung-Tae Kang, Jin-Yup Lee, Hyung-Gon Kim, Doo-Sub Lee, Jeong-Don Ihm, Young-Sun Min, An-Soo Park, Chulbum Kim, Jinho Ryu, Dongku Kang, Pansuk Kwak, Doohyun Kim, Kyung-Min Kang, Sung-Yeon Lee, Yong Sung Cho, Moosung Kim, Wandong Kim, Lee Han-Jun, Cheon An Lee, In-Mo Kim, Bong-Kil Jung, Woopyo Jeong, Jae-Ick Son, Nayoung Choi, Ki-Tae Park, Kye-Hyun Kyung, Dae-Seok Byeon, Dong-Su Jang
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:210-217
A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and variations are discussed. To enhance performance, reverse read scheme and variable-pulse scheme
Autor:
Jeong-Hyuk Choi, Jinho Ryu, Sang-Won Park, Myung-Hoon Choi, Hyang-ja Yang, Dae-Han Kim, Kye-Hyun Kyung, Donghun Kwak, Kitae Park, Dae-Seok Byeon, Jeong-Don Ihm, Jae-Hoon Jang, Moosung Kim, Kyung-Tae Kang, Doo-Sub Lee, Dongkyo Shim, Ji-Ho Cho, Wook-Ghee Hahn, You-Se Kim, Sang-Won Shim, Jae-Woo Im, Sang-Won Hwang, In-Mo Kim, Hyun-Jun Yoon, Doohyun Kim, Woopyo Jeong, Sang-Wan Nam, Seok-Min Yoon, HyunWook Park
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:204-212
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die si
Autor:
Dae-Woon Kang, Chunan Lee, Jin-Yub Lee, Hyung-Gon Kim, Kitae Park, HyunWook Park, Moosung Kim, Sangki Hong, Sung-Hoon Lee, Kye-Hyun Kyung, Jeong-Don Ihm, In-Mo Kim, Inryul Lee, Ji-Young Lee, Ji-Sang Lee, Hyun-Jun Yoon, Seung-Hwan Song, Dongkyu Yoon, Young-don Choi, Yelim Kwon, Yong-Ha Park, Sung-Hoon Kim, Ji-Ho Cho, Jaedoeg Yu, Park Jiyoon, Doohyun Kim, Nayoung Choi, Nahyun Kim, Chulbum Kim, Pansuk Kwak, Hyun-Jin Kim, Jong-Hoon Lee, Woopyo Jeong, Hwajun Jang, Jonghoon Park, Byung-Hoon Jeong, Won-Tae Kim, Young-Sun Min, Yang-Lo Ahn, Ki-Sung Kim, Seung-Bum Kim, Dae-Seok Byeon, Jinbae Bang, Park Il-Han
Publikováno v:
ISSCC
The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In the era of big data, storage devices with versatile characteristics are required for ultra
Autor:
Kye-Hyun Kyung, Pansuk Kwak, Jeong-Hyuk Choi, Jinho Ryu, Young-Sun Min, Nayoung Choi, Hyung-Gon Kim, Dae-Seok Byeon, Doohyun Kim, Jeong-Don Ihm, Hyang-ja Yang, Yong Sung Cho, Jaedoeg Yu, Dong-Su Jang, Kyung-Tae Kang, In-Mo Kim, Bong-Kil Jung, Wandong Kim, Kyung-Min Kang, Chulbum Kim, Dongku Kang, Kitae Park, Sung-Yeon Lee, Moosung Kim, Lee Han-Jun, Woopyo Jeong, An-Soo Park, Jae-Ick Son, Doo-gon Kim, Doo-Sub Lee
Publikováno v:
ISSCC
Today's explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to pl
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface
Autor:
Kye-Hyun Kyung, Chulbum Kim, Hyung-Gon Kim, Pansuk Kwak, Jeon Hongsoo, Du-Heon Song, Jae-Yong Jeong, Kwang-Il Park, In-Youl Lee, Jinman Han, Jaewoo Lim, Young-Hyun Jun, Tae-Sung Lee, Young-Ho Lim, Yong-Sik Yim, Jinho Ryu, Doo-Seop Lee, Chang-hyun Cho, Bo-Keun Kim, Woopyo Jeong, Seonghwan Seo, Seong-Soon Cho
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:981-989
A monolithic 64 Gb MLC NAND flash based on 21 nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to 32 KB. It also features a newly developed asynchronous DDR interface that can support up to
Autor:
Hamid Mahmoodi, Hunsoo Choo, Jongsun Park, Woopyo Jeong, Kaushik Roy, Yongtao Wang, Lih-Yih Chiou
Publikováno v:
Journal of Signal Processing Systems. 58:125-137
Polyphase channelizer is an important component of subband adaptive filtering systems. This paper presents an energy-efficient hardware architecture and VLSI implementation of polyphase channelizer, integrating algorithmic, architectural and circuit