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Autor:
Chun Yung Ai, Vincent Venezia, Grant Lindsay, Woonil Choi, Wu-Zang Yang, Zhiqiang Lin, Yibo Zhu, Geunsook Park, Sangjoo Lee, Alan Chih-Wei Hsiung, Y. Jay Jung, King W. Yeung
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper presents a 64 mega-pixel, backside-illuminated, CMOS image sensor using a 0.7um pixel pitch with a 7.0ke- linear full well capacity (FWC). A switchable conversion gain design was also demonstrated to have a high 18.0ke- FWC in 4-Cell pixel