Zobrazeno 1 - 10
of 96
pro vyhledávání: '"WoongJe Sung"'
Autor:
Stephen A. Mancini, Seung Yup Jang, Zeyu Chen, Dongyoung Kim, Alex Bialy, Balaji Raghotamacher, Michael Dudley, Nadeemullah Mahadik, Robert Stahlbush, Mowafak Al-Jassim, Woongje Sung
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 150-158 (2024)
Several different designs of 1.2kV-rated 4H-SiC MOSFETs have been successfully fabricated under various ion implantation conditions. Implantation conditions consisted of different P+ profiles and implantation temperatures of both room temperature (25
Externí odkaz:
https://doaj.org/article/1270876fa2c248cda42a97598fc69977
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 989-995 (2022)
1.2kV 4H-SiC MOSFETs with different junction depths of JFET and P-well regions were fabricated. For each JFET/P-well depth combination, channel lengths and JFET widths were also varied to compare specific on-resistance, breakdown voltage, and short-c
Externí odkaz:
https://doaj.org/article/f246663b53584e9e9e6b8a681ae4517a
Autor:
Tianshi Liu, Hua Zhang, Sundar Babu Isukapati, Emran Ashik, Adam J. Morgan, Bongmook Lee, Woongje Sung, Ayman Fayed, Marvin H. White, Anant K. Agarwal
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 129-138 (2022)
Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high
Externí odkaz:
https://doaj.org/article/da1ff765b0fc44b8a3a07ceecf6d277a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 495-503 (2022)
SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse rec
Externí odkaz:
https://doaj.org/article/859cb6448bc44aa1ba441aa4e7d8c9ea
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 804-812 (2021)
A detailed structural analysis of 1.2 kV 4H-SiC MOSFETs with accumulation mode channel is reported in this paper. 1.2 kV SiC MOSFETs with a variety of cell designs were fabricated and compared with respect to the output and transfer characteristics,
Externí odkaz:
https://doaj.org/article/90459cb704784e98baaa02d16284db15
Autor:
Sundar Babu Isukapati, Woongje Sung
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 176-181 (2020)
This paper reports generalized design solutions for the punch-through and nonpunch-through drift layers in 4H-SiC. In general, the critical electric field relation of Konstantinov is widely used to design the drift parameters in 4H-SiC due to its acc
Externí odkaz:
https://doaj.org/article/5ffaa51466864bf6941b9f89f8612a37
Autor:
Dongyoung Kim, Woongje Sung
Publikováno v:
IEEE Electron Device Letters. 44:979-982
Autor:
Nick Yun, Woongje Sung
Publikováno v:
IEEE Transactions on Electron Devices. 69:3826-3832
Autor:
Jesse T. Kemmerling, Rian Guan, Mansura Sadek, Sundar Isukapati, Woongje Sung, Sang-Woo Han, Rongming Chu
Publikováno v:
IEEE Electron Device Letters. 43:701-704
Publikováno v:
IEEE Electron Device Letters. 43:785-788