Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Woong-Hee Sohn"'
Publikováno v:
Korean Journal of Metals and Materials. 58:439-445
In this study, we report how Cu doping can modify the thermoelectric performance of p-type Bi0.5Sb1.5Te3 and Bi0.4Sb1.6Te3 thermoelectric alloys, including their electronic and thermal transport properties. For electronic transport, the power factors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13ce79f0b32e146a6a9d03a9cda77a3d
https://doi.org/10.3365/kjmm.2020.58.6.439
https://doi.org/10.3365/kjmm.2020.58.6.439
Autor:
Gil Heyun Choi, Seung-Hyun Lim, Chang-Won Lee, Byung-Il Ryu, Kyong Hee Joo, In-Seok Yeo, Joo Tae Moon, U-In Chung, Woong Hee Sohn, Jin-ho Park, Sang-Woo Lee
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
We describe a novel technique of fabricating WN nanocrystal memory device. Pulsed nucleation layer (PNL) method is firstly introduced for the formation of uniformly distributed high density (/spl sim/ 1.6 /spl times/ 1012 /cm/sup 2/) nanocrystals wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0f5370c164b4438b2b10d68d648442b
https://doi.org/10.1109/.2005.1469263
https://doi.org/10.1109/.2005.1469263
Autor:
June Moon, Kwang-jin Moon, Sang-Bom Kang, Hyung-Gon Kim, Woong-Hee Sohn, N.J. Bae, Suk-pil Kim, G.H. Choi, U. I. Chung
Publikováno v:
IEEE International Electron Devices Meeting 2003.
A novel CVD-cobalt process which enables a uniform salicidation even in novel MOS device structures with complex shape is developed for the first time. With CVD-cobalt salicidation, identical values of low sheet resistance can be realized on actives
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2196bce52ad366ecfbee75c3aa36e77a
https://doi.org/10.1109/iedm.2003.1269331
https://doi.org/10.1109/iedm.2003.1269331
Autor:
Joo-Tae Moon, Jong-Ho Yun, Hyun-Su Kim, Gil-heyun Choi, U-In Chung, Sung-tae Kim, Woong-Hee Sohn, Sug-Woo Jung, Kwang-jin Moon, Seong-hwee Cheong, Se-Hoon Kim, Nam-Jin Bae
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1697e59ec8e4283367509c7364a7bb
https://doi.org/10.7567/ssdm.2004.p3-7
https://doi.org/10.7567/ssdm.2004.p3-7
Autor:
Byung Hak Lee, Woong Hee Sohn, Jae Hwa Park, Hee Sook Park, Byung Hee Kim, Gil Heyun Choi, Sung Tae Kim, U-In Chung, Joo Tae Moon
Publikováno v:
ECS Meeting Abstracts. :677-677
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61c7655417fb4ac498200bf3721b772c
https://doi.org/10.1149/ma2007-01/14/677
https://doi.org/10.1149/ma2007-01/14/677
Autor:
U-In Chung, Woong-Hee Sohn, Jong-Ho Yun, Kwang-jin Moon, Joo-Tae Moon, Byung-Il Ryu, Gil-heyun Choi, Nam-Jin Bae, Sung-tae Kim, Hyun-Su Kim, Eun-ji Jung, Se-Hoon Kim, Sug-Woo Jung
Publikováno v:
Japanese Journal of Applied Physics. 44:3828
The improved contact resistance was obtained by the new barrier metal scheme such as CVD-Co/Ti/TiN process in the level of about half of that from CVD-Ti/TiN process. And the mechanism of contact silicidation of CVD-Co/Ti/TiN was investigated. Becaus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7063c2dacf47a26ac29f62ef2de05733
https://doi.org/10.1143/jjap.44.3828
https://doi.org/10.1143/jjap.44.3828
Autor:
Seung-Hyun Lim, Kyong Hee Joo, Jin-Ho Park, Sang-Woo Lee, Woong Hee Sohn, Changwon Lee, Gil Heyun Choi, In-Seok Yeo, U-In Chung, Joo Tae Moon, Byung-Il Ryu
Publikováno v:
2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p190-191, 2p